Browsing by Author "Hsieh, Chung-Lun"

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Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors
(2014-02-01)
Tai, Ya-Hsiang
;
Chang, Chun-Yi
;
Hsieh, Chung-Lun
;
Yang, Yung-Hsuan
;
Chao, Wei-Kuang
In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.
Effects of Illumination on the Noise Behavior of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
(2016-07)
Tai, Ya-Hsiang
;
Chang, Chun-Yi
;
Hsieh, Chung-Lun
;
光電工程學系
;
顯示科技研究所
In this paper, we investigate the response of low-frequency noise to the light for the amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Compared with the case of nonillumination, the noise level increases with the light intensity. We find that the induced noise is more related to the drain current (I-D) with or without illumination, even though the corresponding gate voltage can be different. With fixed light intensity, the noise induced at the same I-D keeps the same regardless of the illumination history. The noise mechanism is analyzed to be mainly the carrier mobility fluctuation, but carrier number fluctuation becomes important under illumination. We speculate that oxygen vacancies generated by light affect the trapping and releasing of carrier. It thus leads to the noise increasing with illumination.