Browsing by Author "Hsieh, I. J."

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A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
(2007-10-01)
Yang, H. J.
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Chin, Albert
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Chen, W. J.
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Cheng, C. F.
;
Huang, W. L.
We describe a programmable-erasable MIS capacitor with a single high-kappa Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of similar to 6.6 fF/mu m(2), low program and erase voltages of +5 and -5 V, respectively, and a large Delta V-fb memory window of 1.5 V. In addition, the 25 degrees C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.
High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment
(2010)
Cheng, C. H.
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Hsu, H. H.
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Hsieh, I. J.
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Deng, C. K.
;
Chin, Albert
In this study, we successfully fabricated high-kappa Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400 C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of similar to 17 fF/mu m(2) at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-alpha) of 866 ppm/V(2) at a 10.3 fF/mu m(2) density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher-kappa TiCeO dielectrics, and a high work-function Ir metal. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3294495] All rights reserved.
Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectric
(2007)
Hung, B. F.
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Wu, C. H.
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Chin, Albert
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Wang, S. J.
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Lin, J. W.
We have demonstrated high-performance metal-gate/high-k Ytterbiuni/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-k LaAlO3 dielectric. The high breakdown voltage is also due to the high-k LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.
Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors
(2007)
Chiang, K. C.
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Huang, C. C.
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Pan, H. C.
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Hsiao, C. N.
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Lin, J. W.
An unavoidable drawback when using high-kappa dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high-kappa TiHfO capacitors. This avoids sacrificing the overall kappa value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits. (c) 2007 The Electrochemical Society.
Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications
(2007)
Chiang, K. C.
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Lin, J. W.
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Pan, H. C.
;
Hsiao, C. N.
;
Chen, W. J.
We demonstrate a high-performance TaN/SrTiO3/TaN metal-insulator- metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fF/mu m(2), small voltage linearity alpha of 54 ppm/V-2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits. (c) 2007 The Electrochemical Society.