Browsing by Author "Hsieh, Sheng-Kai"

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A 13.56 MHz Pulse-Width Modulation Active Rectifier for Implantable Medical Devices
(2017-01-01)
Yang, Fu-Bin
;
Hsieh, Sheng-Kai
;
Chen, Po-Hung
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this paper, a 13.56 MHz regulated dual-output active rectifier is proposed for implantable medical devices (IMDs). By adopting the pulse-width modulation (PWM) to control the conduction time of the rectifying switches, the proposed active rectifier is able to realize the rectification and regulation of dual-output voltages without adding DC-DC converters. The proposed automatic digital offset compensation (ADOC) can automatically compensate both turn-on and turn-off delay to maximize the conversion power and minimize the reverse current. Dual-output voltages 1.8 V and 3.3 V are generated to supply the internal circuit in IMDs. The simulated maximum power conversion efficiency (PCE) is 78.5%, and the input operating voltage ranges from 3.6 V to 5 V. Comparing to the conventional constant offset calibration, the efficiency improvement of 8% is obtained.
A 13.56MHz Power-Efficient Active Rectifier with Digital Offset Compensation for Implantable Medical Devices
(2016)
Fuh, Jonathan
;
Hsieh, Sheng-Kai
;
Yang, Fu-Bin
;
Chen, Po-Hung
;
電子工程學系及電子研究所
In this paper, a 13.56 MHz power-efficient CMOS active rectifier is proposed for implantable medical devices. The digital offset compensation technique automatically compensates the turn-off delay to minimize the reverse leakage current to improve the conversion efficiency. The simulation results show that the proposed rectifier achieves 92.9% PCE with wide input voltage range. The input operating voltage ranges from 1.5V to 4.5V and the efficiency improvement of 6.5% is also obtained.