Browsing by Author "Hsieh, T. E."

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Copper voids improvement for the copper dual damascene interconnection process
(2008-02-01)
Wang, T. C.
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Wang, Y. L.
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Hsieh, T. E.
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Chang, S. C.
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Cheng, Y. L.
The mechanism of copper (Cu) voids formation from electro-chemical plating (ECP) followed by Cu chemical mechanical polishing (CMP) are studied in Cu dual-damascene interconnection. The formation of Cu voids at metal lines is the main problem that causes not only the failure of via-induced metal-island corrosion but also yield loss. The galvanic theory and Cu lifting mechanism are proposed to explain the dependence of Cu-void performance on the Cu grain size and the benzotriazole (BTA, C6H5N3) flow rates. In the integration process of Cu interconnects, it is found that the smaller Cu grain size in ECP conditions and less BTA flow rate in CMP processes cannot only reduce the number of Cu voids but also improve the water yield. (c) 2007 Elsevier Ltd. All rights reserved.
Efficiency improvement of flexible phosphorescent organic light emitting diode by inserting a buffer layer
(2008-01-01)
Tsai, Y. S.
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Wang, S. H.
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Juang, F. S.
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Su, S. Y.
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Chang, M. H.
In this study, we dissolved hole transport layer (HTL) material NPB in THF (tetrahydrofuran) solvant, and spin-coated the N,N'-Bis(naphthalene-l-yl)-N,N'-bis(phenyl)-benzidine (NPB) solution on the surface of Indium. Tin Oxide (ITO) anode to enhance the luminance efficiency and lifetime of flexible phosphorescent organic light emitting diodes (POLEDs), where the 2,2',2"-(1,3,5-Benzinetriyl)-tris(I-phenyl-l-H-benzimidazole) (TPBi) was employed as hole blocking layer (HBL) and its thickness was optimized. Such an improvement in the device performance was attributed to the improved hole-electron balance. Finally, we employed 2,9-Dime-thyl-4,7-dphenyl-1,10-phenanhroline (BCP) or TPBi as hole blocking layer. The maximum luminance efficiency reaching 24.4 cd/A can be obtained.
Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
(2016)
Lin, Y. C.
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Lin, J. C.
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Lin, Y.
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Wu, C. H.
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Huang, Y. X.
Evaluation of GaN HEMT with Field Plate for Reliability Improvement
(2016)
Lin, Y. C.
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Lin, J. C.
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Lin, Y.
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Wu, C. H.
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Chin, P. C.