Browsing by Author "Hsieh, Yen-Ting"

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Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si(1.33)Ge(0.67)O(2) and Si(2.67)Ge(1.33)N(2) Layers
(2009-03-01)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Hsieh, Yen-Ting
;
Chang, Chun-Yen
;
電子工程學系及電子研究所
In this study, the authors proposed a formation mechanism of Ge nanocrystals (NCs) embedded in the dielectric by using Si(1.33)Ge(0.67)O(2) and Si(2.67)Ge(1.33)N(2) films for nonvolatile memory (NVM) application. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high-pressure H(2) treatment or steam process. The metal/oxide/insulator/oxide/silicon capacitor structure with NCs was also studied, and exhibited hysteresis characteristics after electrical operation. Transmission electron microscopy clearly shows the shape and density of NCs in the dielectric. In addition, the obvious memory window can be used to define "1" and "0" states at low-voltage program operation. Furthermore, good endurance and retention characteristics are exhibited for the Ge NCs embedded in SiN(x) structure. Besides, this technology is suitable for the current NVM fabrication and low-power device application.
Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 Layers
(2009-03-01)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Hsieh, Yen-Ting
;
Chang, Chun-Yen
;
電子工程學系及電子研究所
In this study, the authors proposed a formation mechanism of Ge nanocrystals (NCs) embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory (NVM) application. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high-pressure H-2 treatment or steam process. The metal/oxide/insulator/oxide/silicon capacitor structure with NCs was also studied, and exhibited hysteresis characteristics after electrical operation. Transmission electron microscopy clearly shows the shape and density of NCs in the dielectric. In addition, the obvious memory window can be used to define "1" and "0" states at low-voltage program operation. Furthermore, good endurance and retention characteristics are exhibited for the Ge NCs embedded in SiNx structure. Besides, this technology is suitable for the current NVM fabrication and low-power device application.
Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
(2007-09-03)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Hsieh, Yen-Ting
;
Sze, Simon M.
;
Chang, Chun-Yen
The authors proposed a formation mechanism of Ge nanocrystals embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory application in this study. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high pressure H-2 treatment or steam process. In this research, the preannealing capping oxide step is a critical process for nonvolatile memory effect. Transmission electron microscope shows the shape and density of nanocrystals in the dielectric. Moreover, the memory structure with Ge nanocrystal embedded in SiNx has better charge storage ability and data retention than Ge nanocrystal embedded in SiOx. (C) 2007 American Institute of Physics.
Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
(2007-12-15)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Yeh, Jui-Lung
A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis. Moreover, an over-oxidation phenomenon for the formation of GeO2 in this work was found at higher temperature oxidation according to the X-ray photoelectron spectroscopy analysis. The obvious memory window was found in the capacitance-voltage hysteresis curve, and the program efficiency of holes was superior to electrons due to the electronic affinity of GeO2 smaller than silicon substrate for a structure of Ge nanocrystals surrounded with GeO2 layer. Furthermore, the Ge nanocrystals surrounded with GeO2 layer structure has good retention time and endurance. (c) 2007 Elsevier B.V All rights reserved.