Browsing by Author "Hsu, C. -H."

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A transition of three to two dimensional Si growth on Ge (100) substrate
(2012-12-15)
Tu, W. -H.
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Lee, C. -H.
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Chang, H. T.
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Lin, B. -H.
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Hsu, C. -H.
For the initial growth of Si on Ge, three-dimensional Si quantum dots grown on the Ge surface were observed. With increasing Si thickness, the Si growth changes from three-dimensional to two-dimensional growth mode and the dots disappear gradually. Finally, the surface is smooth with the roughness of 0.26 nm, similar to the original Ge substrate, when 15 nm Si is deposited. More Ge segregation on the wetting layer leads to more open sites to increase the subsequent Si growth rate on the wetting layer than on the Si dots. The in-plane x-ray diffraction by synchrotron radiation is used to observe the evolution of tensile strain in the Si layer grown on Ge (100) substrate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770408]
Anomalous magnetic ordering in b-axis-oriented orthorhombic HoMnO(3) thin films
(2008-03-31)
Lin, T. H.
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Hsieh, C. C.
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Shih, H. C.
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Luo, C. W.
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Uen, T. M.
Orthorhombic HoMnO(3) films with well-aligned crystallographic orientations were deposited on LaAlO(3)(110) single crystal substrates by using pulsed laser deposition. The nearly perfect b-axis-oriented films provide the opportunity of investigating the orientation-dependent physical property of this material. The temperature dependent magnetization evidently displays an antiferromagnetic ordering near 42 K, irrespective to the direction of applied field. Furthermore, the theoretically expected lock-in transition was clearly observed at around 30 K when field was applied along the c axis and was undetectable along the a and b axes. The 30 K transition was suppressed to 26 K when the applied field increased from 100 to 500 Oe. (C) 2008 American Institute of Physics.
Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epi-films
(2009)
Kuo, C. C.
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Liu, W. -R.
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Hsieh, W. F.
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Hsu, C. -H.
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Hsu, H. C.
Crystal symmetry breaking of wurtzite C(6V) to orthorhombic C(2V) due to in-plane anisotropic strain was investigated for nonpolar a-ZnO epi-films grown on R-sapphire.
Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epifilms
(2009-07-06)
Kuo, C. C.
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Liu, W. -R.
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Hsieh, W. F.
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Hsu, C. -H.
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Hsu, H. C.
Crystal symmetry breaking of wurtzite C-6V to orthorhombic C-2V due to in-plane anisotropic strain was investigated for nonpolar (11 (2) over bar0) ZnO epifilms grown on the R-sapphire. X-ray diffraction results reveal the epilayer is subjected to a compressive strain along the polar c-axis and tensile strains along both a-[11 (2) over bar0] surface normal and in-plane p-[1 (1) over bar 00] axis. The polarized Raman spectra of E-2 modes reveal violation of the C-6V selection rules. Oppositely, the C-2V configuration satisfies the selection rules for the Raman modes. The observed E-1 and E-2 bands in polarized optical reflection and photoluminescence spectra confirm the anisotropic strain causes the structure change to the orthorhombic one. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3159470]
Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y(2)O(3) Buffer Layer on Si (111)
(2009-01-01)
Liu, W. -R.
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Li, Y. -H.
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Hsieh, W. F.
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Hsu, C. -H.
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Lee, W. C.
High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y(2)O(3) buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y(2)O(3) follows (0001)< 2 (1) over bar(1) over bar0 >(ZnO)parallel to(111)< 10 (1) over bar > Y(2)O(3). ZnO lattice aligns with the hexagonal O sublattice in Y(2)O(3) and the interfacial structure can be well described by domain matching epitaxy with 7 or 8 ZnO {11 (2) over bar0} planes matching 6 or 7 {4 (4) over bar0} planes Of Y(2)O(3) and lead to a significant reduction of residual strain. Superior optical properties were obtained even for ZnO films as thin as 0.21 mu m from photoluminescence results.
Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)
(2009-01-01)
Liu, W. -R.
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Li, Y. -H.
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Hsieh, W. F.
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Hsu, C. -H.
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Lee, W. C.
High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y2O3 buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y2O3 follows (0001)< 2 (1) over bar(1) over bar0 >(ZnO)parallel to(111)< 10 (1) over bar > Y2O3. ZnO lattice aligns with the hexagonal O sublattice in Y2O3 and the interfacial structure can be well described by domain matching epitaxy with 7 or 8 ZnO {11 (2) over bar0} planes matching 6 or 7 {4 (4) over bar0} planes Of Y2O3 and lead to a significant reduction of residual strain. Superior optical properties were obtained even for ZnO films as thin as 0.21 mu m from photoluminescence results.
Effect of Threading Dislocations on Local Contacts in Epitaxial ZnO Films
(2010)
Lin, C. Y.
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Liu, W. -R.
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Chang, C. S.
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Hsu, C. -H.
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Hsieh, W. F.
Local conductance of a ZnO epifilm with a columnar-grain structure was studied by conductive-mode atomic force microscopy. The probe-ZnO junction at the grain boundary with high density edge threading dislocations (TDs) behaves as a Schottky contact while the junction at the epitaxial core behaves as an ohmic contact, resulting in the nonuniformity of conductance throughout the film. The calculated Schottky barrier is 0.4 +/- 0.025 eV. The point defects of doubly charged Zn vacancies accumulated at the edge TDs induce local band bending of ZnO, thus contributing to the Schottky nature at the grain boundary.
Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces
(2009-07-01)
Lin, Yow-Jon
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Tsai, Chia-Lung
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Liu, W. -R.
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Hsieh, W. F.
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Hsu, C. -H.
We report on the effect of ultraviolet (UV) treatment on the specific contact resistance (rho) and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher rho of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of rho. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in rho of Ti/ZnO samples.
Epitaxial stabilization of a monoclinic phase in Y(2)O(3) films on c-plane GaN
(2011-05-15)
Chang, W. H.
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Chang, P.
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Lee, W. C.
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Lai, T. Y.
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Kwo, J.
Nanometer-thick Y(2)O(3) films were grown epitaxially on GaN (0 0 0 1) using molecular beam epitaxy (MBE). The structures of the oxide films were studied in situ by reflection high energy electron diffraction (RHEED) during the growth and ex situ by high resolution X-ray diffraction using synchrotron radiation. At atmospheric pressure. Y(2)O(3) exists in either cubic or hexagonal structure. For the first time, the high-pressure monoclinic phase of Y(2)O(3), stabilized by epitaxy, was prepared and preserved under atmospheric pressure. The electrical characterization carried out on the Y(2)O(3)/GaN metal-oxide-semiconductor (MOS) capacitors showed a leakage current density of similar to 3.3 x 10(-6) A/cm(2) at 1.5 MV/cm, which remained almost the same after 800 degrees C annealing. A dielectric constant of similar to 20 and a hysteresis of similar to 250 mV were deduced from the capacitance-voltage (C-V) curves for the epitaxial monoclinic Y(2)O(3). (C) 2010 Elsevier B.V. All rights reserved.
Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
(2011-05-15)
Chang, W. H.
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Chang, P.
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Lee, W. C.
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Lai, T. Y.
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Kwo, J.
Nanometer-thick Y2O3 films were grown epitaxially on GaN (0 0 0 1) using molecular beam epitaxy (MBE). The structures of the oxide films were studied in situ by reflection high energy electron diffraction (RHEED) during the growth and ex situ by high resolution X-ray diffraction using synchrotron radiation. At atmospheric pressure. Y2O3 exists in either cubic or hexagonal structure. For the first time, the high-pressure monoclinic phase of Y2O3, stabilized by epitaxy, was prepared and preserved under atmospheric pressure. The electrical characterization carried out on the Y2O3/GaN metal-oxide-semiconductor (MOS) capacitors showed a leakage current density of similar to 3.3 x 10(-6) A/cm(2) at 1.5 MV/cm, which remained almost the same after 800 degrees C annealing. A dielectric constant of similar to 20 and a hysteresis of similar to 250 mV were deduced from the capacitance-voltage (C-V) curves for the epitaxial monoclinic Y2O3. (C) 2010 Elsevier B.V. All rights reserved.
Fabrication and low temperature thermoelectric properties of NaxCoO2 (x=0.68 and 0.75) epitaxial films by the reactive solid-phase epitaxy
(2007-02-05)
Chang, W. J.
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Hsieh, C. C.
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Chung, T. Y.
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Hsu, S. Y.
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Wu, K. H.
The authors have fabricated NaxCoO2 thin films via lateral diffusion of sodium into Co3O4 (111) epitaxial films (reactive solid-phase epitaxy [Ohta , Cryst. Growth Des. 5, 25 (2005)]). The environment of thermal diffusion is key to the control of the sodium content in thin films. From the results of x-ray diffraction and in-plane rho(ab), the epitaxial growth and the sodium contents of these films were identified. The thermoelectric measurements show a large thermoelectric power similar to that observed in single crystals. The quasiparticle scattering rate is found to approach zero at low temperatures, consistent with the small residual resistivity, indicating high quality of the NaxCoO2 thin films. (c) 2007 American Institute of Physics.
High-quality nanothick single-crystal Y(2)O(3) films epitaxially grown on Si (111): Growth and structural characteristics
(2008-05-01)
Lee, Y. J.
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Lee, W. C.
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Nieh, C. W.
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Yang, Z. K.
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Kortan, A. R.
High-quality single-crystal nanothick Y(2)O(3) films have been grown epitaxially on Si (111) despite a lattice mismatch of 2.4%. The films were electron beam evaporated from pure compacted powder Y(2)O(3) target in ultrahigh vacuum. Y(2)O(3) 3 nm thick exhibited a bright, sharp, streaky reconstructed (4x4) reflection high energy electron diffraction pattern. Structural studies carried out by x-ray diffraction with synchrotron radiation and high-resolution transmission electron microscopy show that the films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. Two Y(2)O(3) domains of B-type Y(2)O(3) [2 (1) over bar(1) over bar]parallel to Si[11 (2) over bar] and A-type Y(2)O(3) [2 (1) over bar(1) over bar]parallel to Si[2 (1) over bar(1) over bar] coexist in the initial film growth with B type predominating over A type in thicker films as studied using x-ray diffraction. The narrow full width at half maximum of 0.014 degrees in the omega-rocking curve is the characteristic of excellent crystalline films. High-resolution transmission electron microscopy and fast Fourier transform analysis show atomically sharp interface and strain relaxation in thicker films. (C) 2008 American Vacuum Society.
Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films
(2006-12-29)
Liu, W. -R.
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Hsieh, W. F.
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Hsu, C. -H.
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Liang, K. S.
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Chien, F. S. -S.
The structural and electrical properties of epitaxial ZnO films grown by pulsed-laser deposition on sapphire (0001) were investigated by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), scanning capacitance microscopy (SCM), conductive atomic force microscopy (C-AFM), and transmission electron microscopy (TEM). The results of XRD and AFM revealed that the ZnO films have a columnar-grain structure consisting of epitaxial cores surrounded by annular boundaries. The core and boundary regions exhibited significantly different capacitive responses and field emission current. The results of TEM indicated that the annular boundaries have high-density edge threading dislocations. The shift of flatband voltage and the raise of potential barrier at the boundaries observed by SCM and C-AFM were attributed to the interface trap densities caused by the existence of high-density edge threading dislocations. (c) 2006 Elsevier B.V. All rights reserved.
Magnetic ordering anisotropy in epitaxial orthorhombic multiferroic YMnO(3) films
(2008-11-15)
Hsieh, C. C.
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Lin, T. H.
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Shih, H. C.
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Hsu, C. -H.
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Luo, C. W.
Orthorhombic YMnO(3) thin films with (200), (020), and (001) orientations were, respectively, obtained by pulsed laser deposition on SrTiO(3)(110), LaAlO(3)(110), and SrTiO(3)(001) substrates. The results demonstrate that the strain between film and substrate can serve as an alternative in transforming the thermodynamically stable hexagonal YMnO(3) into the orthorhombic phase, which previously could be obtained with high-pressure high temperature syntheses and epitaxy-stabilized thin film processes. More importantly, these films allow us, for the first time, to unambiguously disclose the intrinsic magnetic property along different crystallographic orientations. Our results show that, although the antiferromagnetic (AFM) ordering remains the same, there is an additional spin reordering transition which is very much dependent on the crystallographic orientation along which the measuring field was applied and on the in-plane crystallographic alignment of the films. Detailed analyses indicate that the origin of the observed second reordering may be due to some strain-induced canted AFM state instead of the incommensurate lock-in transitions conceived previously.
Magnetic ordering anisotropy in epitaxial orthorhombic multiferroic YMnO3 films
(2008-11-15)
Hsieh, C. C.
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Lin, T. H.
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Shih, H. C.
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Hsu, C. -H.
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Luo, C. W.
Orthorhombic YMnO3 thin films with (200), (020), and (001) orientations were, respectively, obtained by pulsed laser deposition on SrTiO3(110), LaAlO3(110), and SrTiO3(001) substrates. The results demonstrate that the strain between film and substrate can serve as an alternative in transforming the thermodynamically stable hexagonal YMnO3 into the orthorhombic phase, which previously could be obtained with high-pressure high temperature syntheses and epitaxy-stabilized thin film processes. More importantly, these films allow us, for the first time, to unambiguously disclose the intrinsic magnetic property along different crystallographic orientations. Our results show that, although the antiferromagnetic (AFM) ordering remains the same, there is an additional spin reordering transition which is very much dependent on the crystallographic orientation along which the measuring field was applied and on the in-plane crystallographic alignment of the films. Detailed analyses indicate that the origin of the observed second reordering may be due to some strain-induced canted AFM state instead of the incommensurate lock-in transitions conceived previously.
Magnetism-induced ferroelectric polarization in the c-axis-oriented orthorhombic HoMnO(3) thin films
(2009-11-15)
Lin, T. H.
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Hsieh, C. C.
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Luo, C. W.
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Lin, J. -Y.
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Sun, C. P.
The magnetism-induced ferroelectricity in the E-type orthorhombic HoMnO(3) (o-HMO) films grown on Nb-doped and undoped SrTiO(3)(001) substrates was studied. The temperature dependent magnetization in these films evidently exhibits an antiferromagnetic ordering around 44 K and an anomalous second magnetic ordering along the c-axis near 35 K. Interestingly, at this anomalous transition temperature, an associated ferroelectric polarization was probed by the P-E hysteresis measurements, indicating the intimated coupling between the ferroelectric response and the reordering of Mn spins, which has never been disclosed previously by dielectric constant measurements. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3260241]
Magnetism-induced ferroelectric polarization in the c-axis-oriented orthorhombic HoMnO3 thin films
(2009-11-15)
Lin, T. H.
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Hsieh, C. C.
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Luo, C. W.
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Lin, J. -Y.
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Sun, C. P.
The magnetism-induced ferroelectricity in the E-type orthorhombic HoMnO3 (o-HMO) films grown on Nb-doped and undoped SrTiO3(001) substrates was studied. The temperature dependent magnetization in these films evidently exhibits an antiferromagnetic ordering around 44 K and an anomalous second magnetic ordering along the c-axis near 35 K. Interestingly, at this anomalous transition temperature, an associated ferroelectric polarization was probed by the P-E hysteresis measurements, indicating the intimated coupling between the ferroelectric response and the reordering of Mn spins, which has never been disclosed previously by dielectric constant measurements. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3260241]
Performance enhancement and analysis for IEEE 802.16e/m sleep mode operations with unsolicited grant service/real-time variable-rate connections
(2010-06-11)
Hsu, C. -H.
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Feng, K. -T.
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電機工程學系
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Department of Electrical and Computer Engineering
The power saving class of type II (PSC II), one of the sleep mode operations in the IEEE 802.16e standard, is designed to reduce power consumption for unsolicited grant service (UGS) and real-time variable-rate (RT-VR) connections. However, the configuration of fixed-length listening windows in the PSC II incurs unnecessary energy consumption or packet loss for these types of connections. In order to enhance the performance of sleep mode operations, an approach with adaptive listening window (ALW) is proposed. The ALW scheme dynamically adjusts the length of each listening window based on the number of both arrival and retransmission packets as well as the delay constraint. Numerical analysis and simulation results show that the proposed ALW approach can effectively reduce the packet loss rate for UGS connections, whereas better energy conservation with reduced packet loss rate is achieved for RT-VR connections.
Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
(2012-03-05)
Yang, S.
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Kuo, C. C.
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Liu, W. -R.
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Lin, B. H.
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Hsu, H. -C.
Basal plane stacking faults (BSFs) with density of similar to 1 x 10(6) cm(-1) are identified as the dominant defect in the annealed ZnO thin films grown on c-plane sapphire by atomic layer deposition. The dominant peak centered at 3.321 eV in low-temperature photoluminescence measurements is attributed to the emission from the BSFs. The emission mechanism is considered to be the confined indirect excitons in the region of quantum-well-like structure formed by the BSFs. The observed energy shift of 19 meV with respect to the BSF-bounded exciton at low temperature may be caused by the localization effect associated with the coupling between BSF quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi. org/10.1063/1.3692730]
Quasi-two-dimensional d-spin and p-hole ordering in the three-dimensional perovskite La(1/3)Sr(2/3)FeO(3)
(2010-10-22)
Okamoto, J.
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Huang, D. J.
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Chao, K. S.
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Huang, S. W.
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Hsu, C. -H.
Measurements of resonant soft x-ray magnetic scattering reveal anomalous ordering of 3d spins and 2p holes in perovskite La(1/3)Sr(2/3)FeO(3), which is known to exhibit three-dimensional (3D) charge and spin ordering along the (111) direction. Upon cooling, a quasi-two-dimensional phase consisting of ferromagnetic and charge-disproportionated [111] trilayers of Fe(3+)-Fe(5+)-Fe(3+) precedes the development of 3D magnetic ordering at the transition temperature, in sharp contrast to an ordinary transition from the paramagnetic and charge-uniform phase to the antiferromagnetic and charge-disproportionated phase expected according to conventional wisdom.