Browsing by Author "Hsu, C. C."

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Adaptation to the edge of chaos in a self-starting Kerr-lens mode-locked laser
(2009-08-01)
Hsu, C. C.
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Lin, J. H.
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Hsieh, W. F.
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光電工程學系
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Department of Photonics
We experimentally and numerically demonstrated that self-focusing acts as a slow-varying control parameter that suppresses the transient chaos to reach a stable mode-locking (ML) state in a self-starting Kerr-lens mode-locked Ti:sapphire laser without external modulation and feedback control. Based on Fox-Li's approach, including the self-focusing effect, the theoretical simulation reveals that the self-focusing effect is responsible for the self-adaptation. The self-adaptation occurs at the boundary between the chaotic and continuous output regions in which the laser system begins with a transient chaotic state with fractal correlation dimension, and then evolves with reducing dimension into the stable ML state.
Effect of Mn substitution on electronic structure of Ca(9)Y(PO(4))(7):Eu(2+), Mn(2+) phosphor determined by X-ray absorption spectroscopy
(2011-10-27)
Lu, Y. R.
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Huang, C. H.
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Chen, T. M.
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Lin, J. H.
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Ma, Y. R.
The single-composition Ca(9)Y(PO(4))(7):Eu(2+), Mn(2+) phosphors were synthesized by a solid-state reaction. The luminescent properties and electronic structures were investigated by photoluminescence (PL) and X-ray absorption near-edge structure (XANES). The PL demonstrated energy transfer and a red-shift as the Mn doping level was increased. The energy transfer is ascribed to charge transfer between Eu and Mn. The change of the PL intensity is caused by the increased O 2p-Mn 3d hybridization. The narrowing of the band gap, which finding is supported by the red-shift, is responsible for the formation of the Mn-related states close to the conduction band minimum. (C) 2011 Elsevier B.V. All rights reserved.
Effect of Mn substitution on electronic structure of Ca9Y(PO4)(7):Eu2+, Mn2+ phosphor determined by X-ray absorption spectroscopy
(2011-10-27)
Lu, Y. R.
;
Huang, C. H.
;
Chen, T. M.
;
Lin, J. H.
;
Ma, Y. R.
The single-composition Ca9Y(PO4)(7):Eu2+, Mn2+ phosphors were synthesized by a solid-state reaction. The luminescent properties and electronic structures were investigated by photoluminescence (PL) and X-ray absorption near-edge structure (XANES). The PL demonstrated energy transfer and a red-shift as the Mn doping level was increased. The energy transfer is ascribed to charge transfer between Eu and Mn. The change of the PL intensity is caused by the increased O 2p-Mn 3d hybridization. The narrowing of the band gap, which finding is supported by the red-shift, is responsible for the formation of the Mn-related states close to the conduction band minimum. (C) 2011 Elsevier B.V. All rights reserved.
Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(100)-2 x 1 surfaces
(2010-01-01)
Hsu, C. C.
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Lin, W. H.
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Ou, Y. S.
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Su, W. B.
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Chang, C. S.
The growth of Pb films on the Si(1 0 0)-2 x 1 surface has been investigated at low temperature using scanning tunneling microscopy Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed The island thickness is confined within four to nine atomic layers at low coverage Among these islands. those with a thickness of six layers are most abundant Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectioscopy. They are found to be identical to those taken oil the Pb(1 1 1) islands grown oil the Si(1 1 1)7 x 7 surface. Besides Pb(1 1 1) islands. two additional types of Pb islands are formed. rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90 degrees from a terrace to the adjacent one This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 x 1 substrate (C) 2009 Elsevier B.V. All rights reserved
Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal
(2015-09-14)
Hsu, C. C.
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Chou, C. H.
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Wang, S. Y.
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Chi, W. C.
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Chien, C. H.
In this study, we developed an Ohmic contact structure to an in situ n(+)-Ge film that has an ultralow specific contact resistivity of [(6.8 +/- 2.1) x 10(-8) Omega.cm(2)]. This structure was developed by introducing a PtGe alloy as the contact metal. We observed that Ohmic contact behavior can be achieved with several other metals, and the contact resistance is related to the work function of the metal. A physical model of the band diagram was created for the Schottky tunneling width, which can provide insight into the validation and explanation of work function-dependent specific contact resistivity. Dopant segregation at the interface and increased interface roughness induced by the formation of the alloy are crucial in further reducing the specific contact resistivity. As a result, a stable PtGe alloy and high doping concentration in Ge are critical in pursuing a lower contact resistance for a Ge n-channel device. (C) 2015 AIP Publishing LLC.
Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)
(2015-12-07)
Hsu, C. C.
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Chou, C. H.
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Wang, S. Y.
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Chi, W. C.
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Chien, C. H.
Polar orientation induced by local photo-assisted poling in azo copolymer films
(2010-04-01)
Chien, F. S. -S.
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Lin, C. Y.
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Huang, C. R.
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Chang, C. S.
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Hsu, C. C.
Polar orientation created by local photo-assisted poling (PAP) in copolymer films containing disperse red 1 was investigated by scanning probe microscopy. PAP was performed by a proximal biased probe, and the polar orientation was semiquantitatively measured by electrostatic force microscopy. The polar orientation behaves as a biexponential function of the period of PAP, which is dominated by fast angular hole burning and slow angular redistribution (AR). The characteristic time of AR decreases linearly with the poling bias. An expression has been developed to interpret the evolution of the Lorentzian-like shape of the poled spots. A poled spot with 150 nm FWHM was demonstrated. (C) 2010 Optical Society of America
Polar orientation induced by local photo-assisted poling in azo copolymer films
(2010-04-01)
Chien, F. S. -S.
;
Lin, C. Y.
;
Huang, C. R.
;
Chang, C. S.
;
Hsu, C. C.
Polar orientation created by local photo-assisted poling (PAP) in copolymer films containing disperse red 1 was investigated by scanning probe microscopy. PAP was performed by a proximal biased probe, and the polar orientation was semiquantitatively measured by electrostatic force microscopy. The polar orientation behaves as a biexponential function of the period of PAP, which is dominated by fast angular hole burning and slow angular redistribution (AR). The characteristic time of AR decreases linearly with the poling bias. An expression has been developed to interpret the evolution of the Lorentzian-like shape of the poled spots. A poled spot with 150 nm FWHM was demonstrated. (C) 2010 Optical Society of America