Browsing by Author "Hsu, CT"

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Application of iterative explicit scheme to 1-D varied flows
(1996)
Hsu, CT
;
Yeh, KC
;
Wu, CM
;
土木工程學系
;
Department of Civil Engineering
Depth-averaged two-dimensional curvilinear explicit finite analytic model for open-channel flows
(2000-05-30)
Hsu, CT
;
Yeh, KC
;
Yang, JC
;
土木工程學系
;
Department of Civil Engineering
A depth-averaged two-dimensional model has been developed in the curvilinear co-ordinate system for free-surface flow problems. The non-linear convective terms of the momentum equations are discretized based on the explicit-finite-analytic method with second-order accuracy in space and first-order accuracy in time. The other terms of the momentum equations, as well as the mass conservation equation, are discretized by the finite difference method. The discretized governing equations are solved in turn, and iteration in each time step is adopted to guarantee the numerical convergence. The new model has been applied to various flow situations, even for the cases with the presence of sub-critical and supercritical flows simultaneously or sequentially. Comparisons between the numerical results and the experimental data show that the proposed model is robust with satisfactory accuracy. Copyright (C) 2000 John Wiley & Sons, Ltd.
Efg1 involved in drug resistance by regulating the expression of ERG3 in Candida albicans
(2005-03-01)
Lo, HJ
;
Wang, JS
;
Lin, CY
;
Chen, CG
;
Hsiao, TY
The ERG3 gene in Candida albicans was identified as a gene whose mRNA level was higher in the cph1/cph1 efg1/efg1 double mutant than in the wild-type cells. Further study showed that Efg1, but not Cph1, negatively regulated ERG3. Mutations in EFG1 consistently increased the susceptibility of the cells to antifungal agents.
Fabricating thin-film transistors on plastic substrates using spin etching and device transfer
(2005)
Wang, SC
;
Yeh, CF
;
Hsu, CT
;
Lou, JC
;
電子工程學系及電子研究所
This work presents a novel method for transferring thin-film transistors (TFTs) from a Si wafer to another flexible plastic substrate. First, high-performance poly-Si TFTs were fabricated on a 1.5 mu m thick SiO2 on a Si wafer and then attached to a flexible plastic substrate by optical adhesive. Next, spin-etching was utilized to remove the backside Si, using SiO2 as a stopping layer. A qualitative model was established to explain the relationship between the chemical flow rate/rotation speed to the etching rate and the uniformity of Si removal. The Si etching rate exceeded 200 mu m/min while the Si to SiO2 selectivity of 250 was maintained given optimized spin-etching parameters. Substrate bonding and Si spin-etching steps caused no degradation or yield loss as compared to the electrical characteristics before transference. Additionally, extrinsic stress only weakly affected the properties of poly-Si resistors and TF`Ts on a flexible plastic substrate. (c) 2005 The Electrochemical Society. [DOI: 10. 1149/1.1860491] All rights reserved.
Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process
(2004)
Wang, SC
;
Hsu, CT
;
Yeh, CF
;
Lou, JC
;
電子工程學系及電子研究所
This work presents a novel method to transfer thin-film transistors from a Si wafer to another flexible plastic substrate. First, high-performance poly-Si TFTs were fabricated on 1-mum thick SiO2 of a Si wafer and then adhered to a flexible plastic substrate by the optical adhesive. Next, the spin-etching process was utilized to remove the backside Si with SiO2 as a stopping layer. We have established a qualitative model to explain the relation between the chemical flow rate/rotation speed to the etching rate and the uniformity of Si removal. The Si etching rate is higher than 200 mum/min while maintaining Si to SiO2 selectivity of 250 under optimized spin-etching parameters. Compared to that before transference, no degradation or yield loss was found due to substrate bonding and Si spin-etching steps. Additionally, extrinsic stress shows little effect to the properties of poly-Si resistors on the flexible plastic substrate.
Iterative explicit simulation of 1D surges and dam-break flows
(2002-03-10)
Hsu, CT
;
Yeh, KC
;
土木工程學系
;
Department of Civil Engineering
The one-dimensional Saint Venant equations for shallow-water flows are used to simulate the flood wave resulting from the sudden opening (or Closure) of a gate or collapse of a dam. An iterative explicit characteristics-based finite-difference method, based on the explicit finite analytic method, is proposed to discretize the dynamic equation, and the conservative control volume method is used for the discretization of the continuity equation. Surge and dam-break, flows in a horizontal, rectangular and frictionless channel were first considered, under such conditions the analytic solutions exist. For the surge simulation, numerical results of the proposed scheme are nearly identical to those obtained from the Preissmann scheme. For the dam-break simulations addressing three ratios of tailwater depth to water depth in the reservoir, the proposed scheme, as compared with the analytic solutions, yields better results than those obtained by the MacCormack scheme, the Gabutti scheme, and Jha et al.'s flux splitting scheme (J. Hydraul. Res. 1996, 34(5):605-621). As the depth ratio approaches zero, the accuracy of the proposed scheme is still satisfactory, even with the dry-bed condition. Investigations then were made for more realistic dam-break flow waves propogating in a sloped and frictional channel. Lacking analytic solutions, the simulating results from the proposed scheme as well as those from Chen's scheme (J. Hydraul. Dir. 1980; 106(HY4):535-556) were compared with the laboratory data collected in 19601961 at the United States Army Engineer Waterways Experiments Station (WES). An assumed initial flow was required for the computer-simulated condition in Chen's model. However, this is riot the case in the proposed model, i.e., a real dry-bed condition was set as the initial condition in the downstream channel of the dam. The consistency between the two simulated results is obvious compared with the experimental data. Copyright (C) 2002 John Wiley Sons, L.td.