Browsing by Author "Hsu, Chin-Tsai"

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A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors
(2010-10-29)
Chen, Wei-Chen
;
Lin, Horng-Chih
;
Lin, Zer-Ming
;
Hsu, Chin-Tsai
;
Huang, Tiao-Yuan
Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 mu m were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the single-gated modes. Through simulation and experimental verification, the root cause for this phenomenon was identified to be the non-uniformly distributed dopants introduced by ion implantation.
A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors
(2010-10-29)
Chen, Wei-Chen
;
Lin, Horng-Chih
;
Lin, Zer-Ming
;
Hsu, Chin-Tsai
;
Huang, Tiao-Yuan
Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 mu m were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the single-gated modes. Through simulation and experimental verification, the root cause for this phenomenon was identified to be the non-uniformly distributed dopants introduced by ion implantation.