Browsing by Author "Hsu, Ching-Hsiang"

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A factor-based probabilistic cost model to support bid-price estimation
(2012-04-01)
Wang, Wei-Chih
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Wang, Shih-Hsu
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Tsui, Yu-Kun
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Hsu, Ching-Hsiang
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土木工程學系
An appropriate bid price is essential for winning a construction project contract. However, making an accurate cost estimate is both time-consuming and expensive. Thus, a method that does not take much time and can approximate a proper bid price can help a contractor in making bid-price decisions when the available bid-estimation time is insufficient. Such a method can also generate a target cost and provide a cross-check for their bid prices that were estimated using a detailed process. This study proposes a novel model for quickly making a bid-price estimation that integrates a probabilistic cost sub-model and a multi-factor evaluation sub-model. The cost sub-model, which is simulation-based, focuses on the cost divisions to save estimation time. At the same time, the multi-factor evaluation sub-model captures the specific factors affecting the cost of each cost division. The advantages of the proposed model are demonstrated by its application to three residential housing projects located in northern Taiwan. The steps for applying this model to other contractors are also provided. (C) 2011 Elsevier Ltd. All rights reserved.
BUBBLELESS PACKAGING METHOD
(2010-09-16)
FAN, Shih-Kang
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Hsu, Ching-Hsiang
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Chiu, Cheng-Pu
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Mo, Chi-Neng
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Chiang, Mei-Tsao
A bubbleless packaging method is provided. The method is applicable to package a display element. In the method, firstly, a first substrate and a first protective layer are provided. The first protective layer is formed on the first substrate. Then, a second substrate and a second protective layer are provided. The second protective layer is formed on the second substrate. Then, a plasma treatment is performed on surfaces of the first protective layer and the second protective layer. Then, the first substrate and the second substrate are dipped into a solution after the plasma treatment. Then, the first substrate and the second substrate are laminated in the solution, wherein the first protective layer faces the second protective layer. Finally, the first substrate and the second substrate are taken out from the solution.
Characterization and Packaging of Electronic Paper Display Based on Particle Polarization
(2009)
Chiu, Cheng-Pu
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Hsu, Ching-Hsiang
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Chen, Shih-Chiang
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Fan, Shih-Kang
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Chiang, Mei-Tsao
A particle-based reflective electronic paper has been characterized. Based on the particle polarization, we drive the neutral microspheres to form particle chains in a water solution by applying an AC electric field. The particle-chain transformation regulates the incident light and the reflectivity of the display. Here we developed the device packaging with hydrophilic surface treatments and UV sealing techniques. With a passive-matrix addressing scheme, a reflective electronic paper having 64x64 pixels by particle polarization is realized on a 4 inch by 4 inch panel.
DISPLAY
(2010-06-17)
Fan, Shih-Kang
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Chiu, Cheng-Pu
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Hsu, Ching-Hsiang
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Mo, Chi-Neng
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Chiang, Mei-Tsao
A display includes a first substrate, a first electrode, a second substrate, a second electrode and a display material layer. The first electrode is disposed on the first substrate and the second electrode is disposed on the second substrate. The display material layer is disposed between the first electrode and the second electrode. The display material layer of the invented display includes a solution and a plurality of first micro beads, wherein each of the first micro beads further has a plurality of different axis lengths in different axis directions, and the axis length in at least an axis direction is different from the axis lengths in the rest axis directions so that the first micro beads present different arrangement densities in different driving frequencies under the influence of polarized self-arrangement effect.
DISPLAY MEDIUM AND DISPLAY
(2010-04-01)
Fan, Shih-Kang
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Chiu, Cheng-Pu
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Hsu, Ching-Hsiang
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Chiang, Mei-Tsao
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Mo, Chi-Neng
A display medium and a display are provided. The display medium includes a thermal-sensitive solution and a number of micro particles. The micro particles are dispersed in the thermal-sensitive solution. At a first temperature, the thermal-sensitive solution is in a liquid form, such that the micro particles move freely. At a second temperature, the thermal-sensitive solution is in a colloid form, such that the micro particles are fixed. The first temperature differs from the second temperature.
Effect of Different Tunnel diodes on The Efficiency of Multi-junction III-V Solar cells
(2014-01-01)
Yu, Hung-Wei
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Hong-Quan Nguyen
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Chung, Chen-Chen
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Hsu, Ching-Hsiang
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Hsiao, Chih-Jen
InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is found that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J(peak)) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 10 degrees off GaAs substrates. Furthermore, smooth surface (rms roughness: 1.54 angstrom) and sharp interface for the GaAs/Al0.3Ga0.7As TDs were obtained when the (100) tilted 10 degrees off toward [111] GaAs substrate was used. The conversion efficiency of InGaP/GaAs dual-junction solar cell with N++-GaAs/P++-AlGaAs TD grown on the (100) tilted 10 degrees off toward (111) GaAs substrate is close to 20%.
Gold-Free Cu-Metallized III-V Solar Cell
(2014-01-01)
Hsu, Ching-Hsiang
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Chang, Hsun-Jui
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Yu, Hung-Wei
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Hong-Quan Nguyen
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Ma, Jer-Shen
-Au-free, fully Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells using Pd/Ge/Cu as front contact and Pt/Ti/Pt/Cu/Cr as back contact were fabricated and the results are reported for the first time. From the specific contact resistance measurement, these Cu-metallized ohmic contacts have low contact resistance in the order of 10(-6) Omega-cm(2). AES and TEM results clearly show the formation mechanisms of the Cu-metallization ohmic structures, for Pd/Ge/Cu contact, it was due to the formation of Ge diffusion into the GaAs layer, and for the Pt/Ti/Pt/Cu/Cr contact, it was due to high work function of Pt layer, these copper metallized ohmic contacts were quite stable even after 310 degrees C annealing. The I-V curves of the Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells showed similar electrical characteristics to the solar cells with Au-metallized triple junction solar cell. Overall, the Pd/Ge/Cu and Pt/Ti/Pt/Cu ohmic contacts have been successfully applied to the InGaP/InGaAs/Ge triple-junction solar cells and demonstrated excellent performance.
Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells
(2014-12-01)
Hsu, Ching-Hsiang
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Chang, Edward Yi
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Chang, Hsun-Jui
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Yu, Hung-Wei
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Hong Quan Nguyen
Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 x 10(-6) and 6.9 x 10(-6) Omega cm(2), respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure.
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
(2016-04)
Hsu, Ching-Hsiang
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Shih, Wang-Cheng
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Lin, Yueh-Chin
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Hsu, Heng-Tung
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Hsu, Hisang-Hua
Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated. (C) 2016 The Japan Society of Applied Physics
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
(2016-04-01)
Hsu, Ching-Hsiang
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Shih, Wang-Cheng
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Lin, Yueh-Chin
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Hsu, Heng-Tung
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Hsu, Hisang-Hua
Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated. (C) 2016 The Japan Society of Applied Physics
Particle chain display - an optofluidic electronic paper
(2012-11-21)
Fan, Shih-Kang
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Chiu, Cheng-Pu
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Hsu, Ching-Hsiang
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Chen, Shih-Chiang
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Huang, Li-Lin
A particle-based display medium and a driving mechanism insensitive to the charge polarity of those particles, based on the transformation of particle chains, are developed for reflective electronic paper displays. Particle chains are formed by dipole-dipole interactions between polarized particles with an appropriate electric field applied across the tested display medium, L e. the solution that regulates the light in the field of display technology, containing neutral polystyrene (PS) particles dispersed in water. Formation of the particle chains results in a large change in optical transmittance and reflectance of the display medium. The performance of the particle chain displays (PCD) was evaluated according to macroscopic (device), microscopic (particle) and optical (reflectance) points of view. A display medium (thickness 100 mu m) containing colored PS particles (3 mu m, 2.5% w/v) was polarized to display the fixed images of the directly driven electrodes and programmable images of arrayed (5 x 5) electrodes with electric fields (0.48 MV m(-1) and 0.09 MV m(-1), 500 kHz, respectively). The formation of particle chains under electric fields (0.2 MV m(-1) and 0.4 MV m(-1), 500 kHz) was observed in the microscopic images of a display medium (thickness 100 mu m) with fluorescent PS particles (5 mu m, 1%). Images recorded with a confocal microscope demonstrated the particle chains. The opacity, a common parameter serving to characterize a display medium, was derived by measuring the reflectance ratio of a black background to a white background of the display medium with varied thickness and particle concentration. The temporal response of a display medium (thickness 50 mu m) with black PS particles (3 mu m, 5%) was tested. When an electric field (0.6 MV m(-1), 500 kHz) was applied, the reflectance increased twice at the first data point in 0.7 s, attaining a contrast ratio of 2. Application of a voltage (20 s) yielded a contrast ratio of 10. The performance of a tested display medium, composed of simple PS particles and water and driven to form particle chains by polarization, is reported.
PIXEL DRIVING STRUCTURE OF DISPLAYING THREE COLORS OF PARTICLE DISPLAY AND ITS DISPLAYING COLORS METHOD
(2010-10-07)
Fan, Shih-Kang
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Chiu, Cheng-Pu
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Hsu, Ching-Hsiang
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Mo, Chi-Neng
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Chiang, Mei-Tsao
A pixel driving structure of a particle display displaying three colors and a method for displaying colors thereof are provided. The pixel driving structure includes a first substrate; a first electrode layer disposed on a surface of the first substrate; a second substrate dispoed opposite to the first substrate; a second electrode layer on the second substrate; a particle solution disposed between the first electrode layer and the second electrode layer and having a first color solution, a plurality of second color positive particles, and a plurality of third color negative particles; and an alternating/direct power supply connecting with the first and second electrode layers. A method for displaying color includes steps of applying an alternating voltage to display a first color; applying a first direct voltage to display a third color; and applying a second direct voltage to display a second color.
The reliability study of III-V solar cell with copper based contacts
(2015-12-01)
Hsu, Ching-Hsiang
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Chang, Edward Yi
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Chang, Hsun-Jui
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Maa, Jer-Shen
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Pande, Krishna
The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10(-6) Omega cm(2). The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 degrees C) and a high DC current (6.5 x 10(-4) mA/mu m(2)) stress test. Overall, the solar cell adopting these Cu-based contacts remained quite stable and demonstrated excellent performances after these reliability tests. (C) 2015 Elsevier Ltd. All rights reserved.
Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
(2012-05-01)
Hong-Quan Nguyen
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Chang, Edward Yi
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Yu, Hung-Wei
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Hai-Dang Trinh
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Dee, Chang-Fu
High quality In0.3Ga0.7As and In0.51Ga0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. A TD density of 1 x 10(6) cm(-2) in a fully relaxed In0.51Ga0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In0.51Ga0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown. (c) 2012 The Japan Society of Applied Physics