Browsing by Author "Hsu, Fan-Yi"

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Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films
(2006-12-01)
Hsu, Fan-Yi
;
Leu, Ching-Chich
;
Chien, Chao-Hsin
;
Hu, Chen-Ti
;
電子工程學系及電子研究所
We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2E(c) similar to 87 kV/cm) and a high remanent polarization (2P(r) similar to 15 mu C/cm(2)). The value of 2P(r) decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT,,samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the. incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.
Properties of Pt/SrBi2Ta2O9/BL/Si MFIS structures containing HfO2, SiO2, and Si3N4 buffer layers
(2007)
Leu, Ching-Chich
;
Leu, Chia-Feng
;
Chien, Chao-Hsin
;
Yang, Ming-Jui
;
Huang, Rui-Hao
The physical and electrical properties of Pt/SrBi2Ta2O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si2N4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications. (c) 2007 The Electrochemical Society.