Browsing by Author "Hsu, H. J."

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Enhanced spectral response by silicon nitride index matching layer in amorphous silicon thin-film solar cells
(2012-09-01)
Hsu, C. H.
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Lin, Y. P.
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Hsu, H. J.
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Tsai, C. C.
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光電工程學系
We employed the low temperature hydrogenated amorphous silicon nitride (a-SiNx:H) prepared by plasma-enhanced chemical vapor deposition as a refractive index (n) matching layers in a silicon-based thin-film solar cell between glass (n = 1.5) and the transparent conducting oxide (n = 2). By varying the stoichiometry, refractive index and thickness of the a-SiNx:H layers, we enhanced the spectral response and efficiency of the hydrogenated amorphous silicon thin-film solar cells. The refractive index of a-SiNx:H was reduced from 2.32 to 1.78. Optimizing the a-SiNx:H thickness to 80 nm increased the J(SC) from 8.3 to 9.8 mA/cm(2) and the corresponding cell efficiency increased from 4.5 to 53%, as compared to the cell without the a-SiNx:H index-matching layer on planar substrate. The a-SiNx:H layers with graded refractive indices were effective for enhancing the cell performance. (C) 2012 Elsevier B.V. All rights reserved.
Influence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-Film Solar Cell Application
(2010-01-01)
Wang, C. M.
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Huang, Y. T.
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Yen, K. H.
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Hsu, H. J.
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Hsu, C. H.
In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.
Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells
(2011)
Tsai, C. C.
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Hsu, C. H.
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Hsu, H. J.
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Cheng, P. H.
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Wang, C. M.
This paper focuses on the optimization of the absorber layers in single-junction a-Si:H and a-Si1-xGex:H solar cells. For a-Si:H thin-film solar cells, we have found the electrode-to-substrate (E/S) spacing is an important parameter. By optimizing the E/S spacing, the cell effi-ciency was improved from 7.62% to 8.70% due to an improvement in material quality and JSC. For a-Si1-xGex:H solar cells, by optimizing the Ge-content, the microstructure parameter and the graded bandgap, we were able to improve the cell efficiency to 8.15%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim