Browsing by Author "Hsu, H. T."

Now showing 1 - 9 of 9

An Al(2)O(3) AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications
(2010-01-01)
Wu, Yun-Chi
;
Lin, Yueh-Chin
;
Chang, Edward Yi
;
Lee, C. T.
;
Kei, Chi-Chung
An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single- pole-double-throw (SPDT) switch using Al(2)O(3) high-k gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3380967] All rights reserved.
An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications
(2010-01-01)
Wu, Yun-Chi
;
Lin, Yueh-Chin
;
Chang, Edward Yi
;
Lee, C. T.
;
Kei, Chi-Chung
An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single- pole-double-throw (SPDT) switch using Al2O3 high-k gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3380967] All rights reserved.
Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMT
(2007-02-01)
Chu, L. H.
;
Chang, E. Y.
;
Chang, L.
;
Wu, Y. H.
;
Chen, S. H.
An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 degrees C for gate sinking. After the annealing, the device showed a positive threshold voltage (V-th) shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 mu A/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the V-th was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process.
Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
(2016)
Lin, Y. C.
;
Lin, J. C.
;
Lin, Y.
;
Wu, C. H.
;
Huang, Y. X.
Evaluation of GaN HEMT with Field Plate for Reliability Improvement
(2016)
Lin, Y. C.
;
Lin, J. C.
;
Lin, Y.
;
Wu, C. H.
;
Chin, P. C.
Optimization of gate insulator material for GaN MIS-HEMT
(2016)
Lin, Y. C.
;
Lin, T. W.
;
Wu, C. H.
;
Yao, J. N.
;
Hsu, H. T.
Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.
SPDT GaAs switches with copper metallized interconnects
(2007-02-01)
Wu, Y. C.
;
Chang, E. Y.
;
Lin, Y. C.
;
Hsu, H. T.
;
Chen, S. H.
Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the An metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of I Ss than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input P-1 dB) of 27 dBm at 2.5 GHz. These switches were annealed at 250 degrees for 20 It for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.
Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application
(2019-01-01)
Wang, C.
;
Lin, Y. C.
;
Kuo, C. N.
;
Lee, M. W.
;
Yao, J. N.
An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D tri-gate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.
Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs
(2019-01-01)
Lin, Y. C.
;
Lee, M. W.
;
Tsai, M. Y.
;
Wang, C.
;
Yao, J. N.
In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.