Browsing by Author "Hsu, Hsin-Hwei"

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A novel poly-Si nanowire TFT for nonvolatile memory applications
(2008)
Hsu, Hsin-Hwei
;
Lin, Horng-Chih
;
Huang, Jian-Fu
;
Huang, Tiao-Yuan
;
電子工程學系及電子研究所
A novel ploy-Si nanowire TFT-SONOS device configured with independent double-gate structure was fabricated and characterized. The electrical characteristics including programming and erasing properties were studied. Adding an adequate top-gate bias was found to improve the programming efficiency, resulting in larger memory window.
NONVOLATILE MEMORY DEVICE WITH NANOWIRE CHANNEL AND METHOD FOR FABRICATING THE SAME
(2009-03-12)
LIN, Horng-Chih
;
Su, Chun-Jung
;
Hsu, Hsin-Hwei
A nonvolatile memory device with nanowire channel and a method for fabricating the same are proposed, in which side etching is used to shrink side walls of a side-gate to form a nanowire pattern, thereby fabricating a nanowire channel on the dielectric of the side walls of the side-gate. A nonvolatile memory device with nanowire channel and dual-gate control can thus be achieved. This nonvolatile memory device can enhance data writing and erasing efficiency, and also has the capability of low voltage operation. Moreover, through a process of low cost and easy steps, highly reproducible and mass producible fabrication of nanowire devices can be accomplished.