Browsing by Author "Hsu, Hsin-Yu"

Now showing 1 - 3 of 3

High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet
(2014-11-06)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Hsu, Hsin-Yu
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco-friendly water-based metal salt solution as a precursor is presented. Through the use of APPJ indium-gallium-zinc-oxide (IGZO) film as the channel material and a high-k dielectric HfO2/ZrO2 gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO2/ZrO2/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low V-th of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm(2)/V-s and a large I-on/I-off ratio of 7 x 10(8).
Investigation of LaAlO3/ZrO2/a-InGaZnO thin-film transistors using atmospheric pressure plasma jet
(2014-04-24)
Wu, Chien-Hung
;
Huang, Hau-Yuan
;
Wang, Shui-Jinn
;
Chang, Kow-Ming
;
Hsu, Hsin-Yu
Amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs) with the LaAlO3/ZrO2 gate dielectric stack employing a novel atmospheric pressure plasma jet process that results in small subthreshold swing and low threshold voltage are proposed and fabricated. The influence of post-deposition annealing (PDA) temperature on LaAlO3/ZrO2 gate dielectric stack and device performance was investigated. The equivalent oxide thickness of the LaAlO3/ZrO2 dielectric stack decreases from 11.5 nm without annealing to 7 nm after a 500 degrees C annealing was applied. The LaAlO3/ZrO2/a-InGaZnO TFT with a 500 degrees C annealing exhibits a small subthreshold swing of 77 mV.dec(-1), a high field-effect mobility of 9 cm(2).V-1.s(-1) and an excellent current ratio of 1.8 x 10(7), which could be attributed to the improved gate dielectric quality by the PDA. The LaAlO3/ZrO2/a-InGaZnO TFTs with excellent gate control ability allow the device to operate at a low operating voltage with low power consumption.
The Influence of NH3 Plasma Treatment on Al2O3/HfO2 Gate Dielectrics of TFTs with Atmospheric Pressure Plasma Jet Deposited IGZO Channel
(2014)
Huang, Hau-Yuan
;
Wu, Chien-Hung
;
Wang, Shui-Jinn
;
Chang, Kow-Ming
;
Hsu, Hsin-Yu
Indium-gallium-zinc-oxide (IGZO) thin-film transistors are fabricated by atmospheric pressure plasma jet (APPJ) technique. HfO2 (25 nm) and Al2O3 (25 nm) are used as the gate dielectric stack. NH3 plasma treatment is applied to optimize the device performance by reducing the gate dielectric leakage and increasing the oxide capacitance. The best performance of the APPJ IGZO TFT is obtained with a 30W-60s NH3 plasma treatment with field-effect mobility of 6.1 cm(2)/V-s, subthreshold swing of 0.19 V/dec, and on/off current ratio of 10(8).