Browsing by Author "Hsu, I. -Chen"

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Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
(2008-05-01)
Yang, Hung-Pin D.
;
Hsu, I. -Chen
;
Chang, Ya-Hsien
;
Lai, Fang-I
;
Yu, Hsin-Chieh
We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.
Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range
(2008)
Yang, Hung-Pin D.
;
Hsu, I. -Chen
;
Lai, Fang-I.
;
Lin, Gray
;
Hsiao, Ru-Shang
We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.
High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers
(2007-09-01)
Lai, Fang-I.
;
Yang, H. P. D.
;
Lin, G.
;
Hsu, I. -Chen
;
Liu, Jui-Nung
A high-power, wide operation-range single-fundamental-mode InGaAs submonolayer (SML) quantum dot (QD) photonic crystal vertical-cavity surface-emitting laser (VCSEL) for fiber-optic applications was demonstrated. Single-fundamental-mode with a threshold current (I-th) of 0.9 mA and maximum continue-wave (CW) output power of 3.8 mW at 28 mA has been achieved in the 990 nm range. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range. The far field measurement shows that the beam divergence angle remains very small and almost unchanged between 6.7-6.9 degrees, with the operation range increasing from 3 to 20 mA.