Browsing by Author "Hsu, Jui-Mei"

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Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiOx nano-films prepared by atmospheric pressure plasma deposition system
(2013-12-02)
Chang, Kow-Ming
;
Ho, Po-Ching
;
Ariyarit, Atthaporn
;
Yang, Kuo-Hui
;
Hsu, Jui-Mei
To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bilayer Ga-doped zinc oxide/SiOx films prepared with an atmospheric pressure plasma jet to achieve high haze and low resistivity. A minimum resistivity of 6.00 x 10(-4) Omega.cm was achieved at 8 at.% gallium doping. Examination of X-ray diffraction spectra showed that increased film thickness led to increased carrier concentration in GZO bilayers. The optimal bilayer GZO film achieved considerably higher haze values in the visible and NIR regions, compared with Asahi U-type fluorine doped tin oxide. (C) 2013 Elsevier B. V. All rights reserved.
Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition
(2018-03-01)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Huang, Bo-Wen
;
Zhang, Yu-Xin
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The influence of post-deposition annealing (PDA) temperature on GZO source/drain and device performance was studied. Device with a 300 degrees C annealing demonstrated excellent electrical characteristics with on/off current ratio of 2.13x10(8), saturation mobility of 10 cm(2)/V-s, and low subthreshold swing of 0.2 V/dec. The gate stacked LaAlO3/ZrO2 of AP-IGZO TFTs with highly transparent and conductive AP-GZO source/drain electrode show excellent gate control ability at a low operating voltage.
Investigation of Microwave Assisted Annealing on AP-PECVD Fabricated In-Ga-Zn-O Thin Film Transistors under Positive Bias Temperature Stress
(2016)
Wu, Chien-Hung
;
Huang, Bo-Wen
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Chang, Kow-Ming
;
Cheng, Chia-Yao
;
Chen, Hsin-Ying
In this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA with 300W for 100sec treatment on AP-IGZO TFTs have been fabricated successfully and show excellent electrical characteristics including a VTH of -1.23 V, SS of 0.18 V/dec, mu FE of 17.4 cm2/V-s, and Ion/Ioff ratio of 8.14 106. Stretched exponential time dependence model is used to analyze the mechanism of AP-IGZO TFTs under PBTI stress. Accordingly, chemisorption model for oxygen adsorption at AP-IGZO backchannel with and without MWAA is proposed to explain the mechanism under PBTI stress.
The Investigation for In-Ga-Zn-O TFTs with Post Deposition of in-situ Ar/H-2 Plasma Treatment by Atmospheric Pressure Plasma Jet
(2016)
Chang, Kow-Ming
;
Huang, Bo-Wen
;
Wu, Chien-Hung
;
Chen, Hsin-Ying
;
Zheng, You-Xian
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H-2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H-2 plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm(2)/V.S, V-T of 1.11 V, lower subthreshold swing of 93 mV/decade, higher I-on/I-off of 5.34x10(7). The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.
The Performance Improvement of N-2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel
(2016-06)
Wu, Chien-Hung
;
Huang, Bo-Wen
;
Chang, Kow-Ming
;
Wang, Shui-Jinn
;
Lin, Jian-Hong
The aim of this paper is to illustrate the N-2 plasma treatment for high-kappa ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N-2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N-2 plasma treatment with field-effect mobility (mu(FET)) of 22.5 cm(2)/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I-on/I-off) of 1.49x10(7).
Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells
(2013-07-01)
Chang, Kow-Ming
;
Ho, Po-Ching
;
Yu, Shu-Hung
;
Hsu, Jui-Mei
;
Yang, Kuo-Hui
One of the essential applications of transparent conductive oxides is as front electrodes for superstrate silicon thin-film solar cells. Textured TCO thin films can improve absorption of sunlight for an a-Si:H absorber during a single optical path. In this study, high-haze and low-resistivity bilayer GZO/SiOx thin films prepared using an atmospheric pressure plasma jet (APPJ) deposition technique and dc magnetron sputtering. The silicon subdioxide nano-film plays an important role in controlling the haze value of subsequent deposited GZO thin films. The bilayer GZO/SiOx (90 sccm) sample has the highest haze value (22.30%), the lowest resistivity (8.98 x 10(-4) Omega cm), and reaches a maximum cell efficiency of 6.85% (enhanced by approximately 19% compared to a sample of non-textured GZO). (c) 2013 Elsevier B.V. All rights reserved.