Browsing by Author "Hsu, MY"

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Light emission from the porous boron delta-doped Si superlattice
(1996-02-01)
Chang, TC
;
Yeh, WK
;
Hsu, MY
;
Chang, CY
;
Lee, CP
We report the first study on the porous boron delta-doped Si superlattice. Visible photoluminescence (PL) was observed with multiple peaks from the porous boron delta-doped Si superlattice at room temperature. In the electroluminescence (EL) experiment, a bright yellow light emission was observed from the porous boron delta-doped Si superlattices. However, a weak red light emission was also observed from the conventional porous Si which is anodized at the same etching condition. As a result, the structure of the porous boron delta-doped Si superlattice has the ability of controlling the quantum size in porous Si and enhancing the light intensity from porous Si.
Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD
(2006-03-01)
Hsu, MY
;
Tang, SF
;
Chiang, CD
;
Su, CC
;
Wang, LC
The InAs quantum dot (QD) structures grown on (100) 2 degrees, 6 degrees, 10 degrees, 15 degrees off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with increasing misoriented scales has also been observed experimentally. In this work, we demonstrated that different off-angle substrates would influence the distribution and uniformity of QD due to variant surface potential energies, which are responsible for the two-stage process (migration and nucleation) of InAs adatoms on the off-angle substrates. (c) 2005 Elsevier B.V All rights reserved.