Browsing by Author "Hsu, Ming-Yang"

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Continuous-Wave Lasing of 1.3-mu m Quantum-Dot Photonic-Crystal Surface-Emitting Lasers
(2018-01-01)
Hsu, Ming-Yang
;
Lin, Gray
;
Pan, Po-Chou
;
Chen, Yu-Chen
;
電子工程學系及電子研究所
Fabrication of electrically injected quantum-dot photonic-crystal (PC) surface-emitting lasers (SELs) is simplified by deposition of indium-tin-oxide over "PC slab-on-substrate" structure. Temperature-insensitive threshold current behavior is exhibited for negatively detuned PCSEL where continuous-wave lasing emission at 1308.4 nm is demonstrated for the first time.
Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers
(2017-12-25)
Hsu, Ming-Yang
;
Lin, Gray
;
Pan, Chien-Hung
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated roomtemperature lasing emissions at 1.3-mu m wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indiumtin- oxide over "PC slab-on-substrate" structure. The threshold current density per QD layer was as low as 50 A/cm(2)/layer; however, the optical output was limited to 2 mW. The bandedge lasing mode was identified and near-circular beam with narrow divergence angle less than 2 degrees was achieved. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Photonic Crystal Surface Emitting Lasers with InAs/InGaAs/GaAs Quantum Dots
(2017-01-01)
Chen, Tzu-Shan
;
Lee, Zong-Lin
;
Hsu, Ming-Yang
;
Lin, Gray
;
Lin, Sheng-Di
InAs/InGaAs/GaAs quantum-dot (QD) photonic crystal (PC) surface emitting lasers were fabricated and room-temperature lasing emissions were demonstrated by optical pumping for the first time. The etch depth of PC holes is the critical parameter for adjacent diffraction coupling between PC structure and QD gain media.
Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region
(2017-10-15)
Chen, Tzu-Shan
;
Li, Zong-Lin
;
Hsu, Ming-Yang
;
Lin, Gray
;
Lin, Sheng-Di
GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 mu m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.
Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector
(2018-09-01)
Hsu, Ming-Yang
;
Lin, Gray
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Quantum-dot (QD) photonic-crystal (PC) surface-emitting laser (SEL) devices with bottom distributed Bragg reflector (DBR) were fabricated based on vertical-cavity SEL structure with top DBR completely removed. Two-dimensional (2D) PCs were deeply etched through QD multilayers to yield strong diffraction coupling. Room-temperature optically pumped lasing emissions at 1194 nm and 1296 nm were demonstrated for two lattice periods of 360 nm and 395 nm, respectively. Two lasing wavelengths separated over 100 nm; however, there were less than two times difference in threshold power densities while slope efficiencies were comparable. The unique spectral gain characteristics of QDs were considered in interpretation of gain-cavity detuning. Moreover, simulation revealed the sub-cavity should be designed so that its resonant wavelength is in phase with lasing wavelength.
Temperature Dependence of Electrically Injected Quantum-Dot Photonic-Crystal Surface-Emitting Lasers
(2018-01-01)
Hsu, Ming-Yang
;
Lin, Gray
;
Chen, Yu-Chen
;
Pan, Chien-Hung
;
電子工程學系及電子研究所
We have simplified fabrication of electrically injected quantum-dot photonic-crystal surface-emitting lasers and demonstrated lasing emissions at 1313 nm. Excellent threshold temperature characteristics was exhibited in range of 20 similar to 45 degrees C with characteristics temperature of almost infinity.
Threshold current temperature dependence of quantum-dot photonic crystal surface-emitting lasers with respect to gain-cavity detuning
(2018-05-14)
Hsu, Ming-Yang
;
Lin, Gray
;
Li, Zong-Lin
;
Pan, Po-Chou
;
電機學院
We investigate threshold current temperature dependence of electrically injected quantum-dot (QD) photonic crystal (PC) surface-emitting lasers (SELs) with respect to wavelength detuning between QD gain peak and PC cavity resonance. The lasing emissions cover wavelengths from 1283 nm to 1318 nm. Almost infinite characteristic temperature is realized at certain temperature range for PCSEL with large negative gain-cavity detuning. Moreover, band-edge lasing mode is identified in our "PC slab-on-substrate" structure, and its far-field distribution is characterized as doughnut-shaped beam with azimuthal polarization. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement