Browsing by Author "Hsu, S. -H."

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A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave Annealing
(2014)
Lee, Y. -J.
;
Cho, T. -C.
;
Kao, K. -H.
;
Sung, P. -J.
;
Hsueh, F. -K.
For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (similar to 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. similar to 67mV/dec) and excellent on-off ratio (>10(6)) for both n and p channel devices. Threshold voltage (V-TH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.
Strong Exciton Polariton Dispersion in Multimode GaN Microcavity
(2009)
Liu, M. C.
;
Cheng, Y. -J.
;
Hsu, S. -H.
;
Kuo, H. C.
;
Lu, T. C.
We report the experimental observation of a very strong cavity polariton dispersion in a multi-axial mode GaN microcavity. The linewidth of photoluminescent (PL) spectrum covers a few cavity axial modes. The resonant photoluminescent peaks have a strong dispersion. The frequency spacing between adjacent peaks decreases by almost a factor of five from 470nm to 370nm. The strong dispersion can be well described by cavity polariton dispersion, but not by the dispersion of the refractive index of GaN. The measured exciton-photon interaction constant is 260 meV. It is an order of magnitude higher than the typically reported values for GaN microcavities