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Browsing by Author "Hsu, Ting-Hao"

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    Thin Film Transistor with Al-Ni-La Alloy Gate Metallization Technology
    (2011)
    Liu, Po-Tsun
    ;
    Chou, Yi-Teh
    ;
    Hsu, Ting-Hao
    ;
    Fuh, Chur-Shyang
    ;
    平面顯示技術碩士學位學程
    In this study, an aluminum-nickel-lanthanum (Al-Ni-La) alloy is introduced, for the first time, to hydrogenated amorphous silicon thin film transistor (a-Si: H TFT) for gate metallization technology. Ni atoms in Al-Ni-La can effectively improve contact characteristic with ITO film, while La can increase the uniformity of contact resistance during film deposition compared to the conventional Al-Nd alloy. Besides, Al-Ni-La alloy has advantages of a simple process and better prevention against hillock issues, which benefits active matrix liquid-crystal display (AMLCD) manufacture. The Al-Ni-La gate thin film transistor (TFT) also exhibited reliable electrical characteristics. The process compatibility with typical TFT manufacture makes Al-Ni-La gate metallization greatly promising for AMLCD technology application. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3516178] All rights reserved.