Browsing by Author "Hsu, Tzu-Hsiang"
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Item type:Item, An interactive flower image recognition system(2011-05-01) ;Hsu, Tzu-Hsiang ;Lee, Chang-Hsing ;Chen, Ling-Hwei ;多媒體工程研究所Institute of Multimedia EngineeringIn this paper, we present an interactive system for recognizing flower images taken by digital cameras. The proposed system provides an interactive interface allowing each user to draw an appropriate bounding window that contains the interested flower region. Then, a flower boundary tracing method is developed to extract the flower region as accurately as possible. In addition to the color and shape features of the whole flower region, the color and shape features of the pistil/stamen area will also be used to represent the flower characteristics more precisely. Experiments conducted on two distinct databases consisting of 24 species and 102 species have shown that our proposed system outperforms other approaches in terms of the recognition rate.Item type:Item, PolySi-SiO2-ZrO2-SiO2-Si flash memory incorporating a sol-gel-derived ZrO2 charge trapping layer(2006) ;Hsu, Tzu-Hsiang ;You, Hsin-Chiang ;Ko, Fu-Hsiang ;Lei, Tan-Fu材料科學與工程學系奈米科技碩博班In this paper, we propose a method for depositing the charge trapping layer of a high-k polySi-SiO2-ZrO2-SiO2-Si (SOZOS) memory device. In this approach, the trapping layer was formed through simple two steps: (i) spin-coating of the ZrCl4 precursor and (ii) rapid thermal annealing for 1 min at 900 C under an oxygen atmosphere. The morphology of the ZrO2 charge trapping layer was confirmed through X-ray photoemission spectroscopy analysis. The sol-gel-derived layer exhibited improved charge trapping in the SOZOS memory device, resulting in a threshold voltage shift of 2.7 V in the I-d-V-g curve, P/E (program/erase) speeds as fast as 0.1 ms, good data retention up to 10(4) s (only a 5% charge loss due to deep trapping in the ZrO2 layer), and good endurance (no memory window narrowing after 10(5) P/E cycles). (c) 2006 The Electrochemical Society.