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Browsing by Author "Hsueh, Fang-Chang"

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    Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array
    (2012-06-01)
    Wang, Kuan-Ti
    ;
    Hsueh, Fang-Chang
    ;
    Lu, Yu-Lun
    ;
    Chiang, Tsung-Yu
    ;
    Wu, Yi-Hong
    This letter is the first to successfully demonstrate the 2-bit/cell wrapped-selected-gate (WSG) SONOS thin-film transistor (TFT) memory using source-side injection (SSI). Because of the higher programming efficiency of SSI, a memory window of approximately 3 V can be easily achieved in 10 mu s and 30 ms for the program and erase modes, respectively. In addition, we performed an excellent 2-bit/cell distinguish margin for 3-V memory window in WSG-SONOS TFT memory. The optimal reliability of the endurance and data retention tests can be executed by adjusting the applied voltage appropriately.