Browsing by Author "Hsueh, Hsiu-Wen"

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Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
(2010-11-15)
Zan, Hsiao-Wen
;
Chen, Wei-Tsung
;
Hsueh, Hsiu-Wen
;
Kao, Shih-Chin
;
Ku, Ming-Che
This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517506]
Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
(2010-11-15)
Zan, Hsiao-Wen
;
Chen, Wei-Tsung
;
Hsueh, Hsiu-Wen
;
Kao, Shih-Chin
;
Ku, Ming-Che
This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517506]
Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement
(2011-04-11)
Zan, Hsiao-Wen
;
Chen, Wei-Tsung
;
Yeh, Chung-Cheng
;
Hsueh, Hsiu-Wen
;
Tsai, Chuang-Chuang
In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (phi) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (mu), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (V(th)) from -5.0 to + 7.9 V without an additional back gate power supply. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578403]
Light-Enhanced Bias Stress Effect on Amorphous In-Ga-Zn-O Thin-film Transistor with Lights of Varying Colors
(2011)
Chen, Wei-Tsung
;
Hsueh, Hsiu-Wen
;
Zan, Hsiao-Wen
;
Tsai, Chuang-Chuang
;
光電工程學系
This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color-and bias-polarity-dependent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3584088] All rights reserved.
Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors
(2010)
Zan, Hsiao-Wen
;
Chen, Wei-Tsung
;
Chou, Cheng-Wei
;
Tsai, Chuang-Chuang
;
Huang, Ching-Neng
Instead of the conventional furnace annealing process with a temperature higher than 300 degrees C, two low temperature annealing methods are successfully demonstrated to suppress the instability problem of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). With adequate Nd:yttrium aluminum garnet laser (266 nm) annealing energy density or Xe excimer UV lamp (172 nm) irradiation time, the on voltage shift is greatly suppressed from over 10 to 0.1 V. The influence of laser energy density and UV lamp irradiation time on the performance of IGZO TFTs is also investigated and explained. The proposed methods are promising for the development of amorphous IGZO TFTs on flexible substrates.