Browsing by Author "Hu, C."

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Comparative studies for Cr(4+):YAG crystal and AlGaInAs semiconductor used as a saturable absorber in Q-switched Yb-doped fiber lasers
(2009-11-09)
Huang, J. Y.
;
Zhuang, W. Z.
;
Huang, W. C.
;
Su, K. W.
;
Hu, C.
We demonstrate comparative studies for Cr(4+):YAG crystal and AlGaInAs quantum-well (QW) used as a saturable absorbers in passively Q-switched Yb-doped fiber lasers. Both saturable absorbers were designed to be possessed of nearly the same initial transmission. Under a pump power of 24 W, the average output powers were up to 14.4 W and 13.8 W obtained with the AlGaInAs QWs and with the Cr(4+):YAG crystal, respectively. The maximum pulse energies obtained with the Cr(4+):YAG crystal and with the AlGaInAs QWs were found to be 0.35 mJ and 0.45 mJ, respectively. (C) 2009 Optical Society of America
Comparative studies for Cr4+:YAG crystal and AlGaInAs semiconductor used as a saturable absorber in Q-switched Yb-doped fiber lasers
(2009-11-09)
Huang, J. Y.
;
Zhuang, W. Z.
;
Huang, W. C.
;
Su, K. W.
;
Hu, C.
We demonstrate comparative studies for Cr4+:YAG crystal and AlGaInAs quantum-well (QW) used as a saturable absorbers in passively Q-switched Yb-doped fiber lasers. Both saturable absorbers were designed to be possessed of nearly the same initial transmission. Under a pump power of 24 W, the average output powers were up to 14.4 W and 13.8 W obtained with the AlGaInAs QWs and with the Cr4+:YAG crystal, respectively. The maximum pulse energies obtained with the Cr4+:YAG crystal and with the AlGaInAs QWs were found to be 0.35 mJ and 0.45 mJ, respectively. (C) 2009 Optical Society of America
First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
(2018-01-01)
Luc, Q. H.
;
Fan-Chiang, C. C.
;
Huynh, S. H.
;
Huang, P.
;
Do, H. B.
We demonstrate, for the first time, the negative capacitance (NC) In0.53Ga0.47As nMOSFET with 8-nm Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGaAs nMOSFETs are investigated. Optimized annealing condition results in NC effects at the HZO/Al2O3/InGaAs nMOSFETs with steep SS property (similar to 11 mV/dec).