Browsing by Author "Hu, Chen-Ming"

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Comparison of Ni-metal induced lateral crystallization thin-film transistors fabricated by rapid thermal annealing and conventional furnace annealing at 565 degrees C
(2007-11-01)
Hu, Chen-Ming
;
Wu, Yew Chung Sermon
;
Gong, Jun-Wei
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Two annealing methods, pulse rapid thermal annealing (RTA) and conventional furnace annealing (CFA), were used to fabricate nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) at 565 degrees C. It was found that the growth rate of RTA-POLY was 5 times higher than that of CFA-POLY. The performance of RTA-thin-film transistors (TFTs) was not as good as that of CFA-TFT. RTA-TFT showed lower drain current, higher threshold voltage, larger subthreshold swing, lower electron mobility, and lower leakage current than CFA-TFT.
Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes
(2007-12-01)
Hu, Chen-Ming
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous Si (alpha-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, alpha-Si film was coated on the top of contact holes as Ni-gettering layer. It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask.
Improve the electrical properties of NILC poly-Si films using a gettering substrate
(2007)
Wu, YewChung Sermon
;
Hu, Chen-Ming
;
Lin, Chi-Ching
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, this technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using alpha-Si-coated wafers as Ni-gettering substrates. After gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were reduced.
Improving the electrical properties of NILC poly-Si films using a gettering substrate
(2007-11-01)
Hu, Chen-Ming
;
Wu, YewChung Sermon
;
Lin, Chi-Ching
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using a-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.