Browsing by Author "Hu, Chin-Wei"

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A novel a-Si TFT pixel circuit with high immunity to the degradation of the TFTs and OLEDs used in AMOLED displays
(2007)
Lu, Hau-Yan
;
Liu, Po-Tsun
;
Hu, Chin-Wei
;
Chang, Ting-Chang
;
Chi, Sien
A simple pixel circuit employing a-Si TFT for AMOLED is proposed. The proposed one can eliminate both the threshold voltage shift of the driving TFT and the OLED. The simulation results indicate that the proposed circuit significantly improves the non-uniformity of output current by the new compensation operation.
Elimination of photoleakage current in poly-Si TFTs using a metal-shielding structure
(2008)
Lu, Hau-Yan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Li, Hung-Wei
;
Hu, Chin-Wei
A technology to eliminate the photoleakage current of poly-Si thin-film transistors (TFTs) with top gate structure has been developed. A thin metal film is formed on the glass substrate to be used as a light-shielding layer. The light-shielding layer, buffer layer, and active island are patterned employing the same mask. The leakage current and the variation of subthreshold swing in the proposed devices are suppressed completely under illumination. Due to the parasitic capacitance in the overlap region between the drain side and the metal-shielding layer, a floating voltage coupled from drain bias influences the threshold voltage of the proposed poly-Si TFTs. (c) 2008 The Electrochemical Society.
Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH(3) plasma treatment on buffer layer
(2008-04-14)
Lu, Hau-Yan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Li, Hung-Wei
;
Hu, Chin-Wei
The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH(3) plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.
Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH3 plasma treatment on buffer layer
(2008-04-14)
Lu, Hau-Yan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Li, Hung-Wei
;
Hu, Chin-Wei
The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH3 plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.