Browsing by Author "Hu, HC"

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Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs
(2004)
Chan, CT
;
Kuo, CH
;
Tang, CJ
;
Chen, MC
;
Wang, TH
Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.
Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs
(2003)
Wang, TH
;
Tsai, CW
;
Chen, MC
;
Chan, CT
;
Chiang, HK
Negative substrate bias enhanced breakdown hardness in ultra-thin oxide (1.4nm) pMOS is observed. This result is believed due to the increase of hole stress current during breakdown progression via breakdown induced carrier heating. Numerical analysis of substrate bias effect on hole tunneling current is performed to support the proposed theory. This phenomenon is particularly significant to gate oxide reliability in floating substrate (PD-SOI) or forward-biased substrate devices.