Browsing by Author "Hu, Han-Wen"

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Investigation of Pillar-Concave Structure for Low-Temperature Cu-Cu Direct Bonding in 3-D/2.5-D Heterogeneous Integration
(2020-08-01)
Chou, Tzu-Chieh
;
Yang, Kai-Ming
;
Li, Jian-Chen
;
Yu, Ting-Yang
;
Yang, Yu-Tao
With the advantage of high surface-roughness tolerance, the pillar-concave Cu-Cu direct bonding without chemical-mechanical planarization (CMP) is investigated in detail, including the mechanism of thermal compensation, analysis of roughness, bonding strength, and bonding reliability. With the special design of Cu bond structure, excellent bonding results can be achieved under low thermal budget (150 degrees C for 1 min, atmosphere) with even high roughness of bonding surface. In addition, the pillar-concave scheme applied to fan-out panel-level package (FOPLP) has been demonstrated, showing the high feasibility of this scheme to realize applications in heterogeneous integration.
Low Temperature Copper-Copper Bonding of Non-Planarized Copper Pillar With Passivation
(2020-08-01)
Tsai, Yi-Chieh
;
Hu, Han-Wen
;
Chen, Kuan-Neng
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Low-thermal-budget (180 degrees C for 15 sec) Cu pillar to Cu pillar bonding with Pd passivation under the atmosphere is developed without any planarization pretreatment before the bonding process. The bonded structure is investigated with material analysis, electrical measurement and reliability test. The results show that although the Cu pillar has a high roughness surface due to the electroplating process with a high deposition rate, Cu atoms can still diffuse and connect through the passivation layer and perform the low-thermal-budget Cu pillar direct bonding. Low specific contact resistance and stable resistance of daisy chain shown in the reliability test reveal the excellent bonding quality and integrity. This Cu-Cu bonding method is therefore favorable for chip stacking technology development in 3D packaging domain.