Browsing by Author "Hu, Meng-Hua"

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Development of a parallelized 2D/2D-axisymmetric Navier-Stokes equation solver for all-speed gas flows
(2011-06-01)
Hu, Meng-Hua
;
Wu, Jong-Shinn
;
Chen, Yen-Sen
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機械工程學系
;
Department of Mechanical Engineering
A parallelized 2D/2D-axisymmetric pressure-based, extended SIMPLE finite-volume Navier-Stokes equation solver using Cartesians grids has been developed for simulating compressible, viscous, heat conductive and rarefied gas flows at all speeds with conjugate heat transfer. The discretized equations are solved by the parallel Krylov-Schwarz (KS) algorithm, in which the ILU and BiCGStab or GMRES scheme are used as the preconditioner and linear matrix equation solver, respectively. Developed code was validated by comparing previous published simulations wherever available for both low- and high-speed gas flows. Parallel performance for a typical 2D driven cavity problem is tested on the IBM-1350 at NCHC of Taiwan up to 32 processors. Future applications of this code are discussed briefly at the end. (C) 2010 Elsevier Ltd. All rights reserved.
Parallel 2D Axisymmetric Fluid Modeling of CF4 Discharge in an Inductively Coupled Plasma Source During SiO2 Etching
(2014-04-01)
Chiu, Yuan-Ming
;
Chiang, Chung-Hua
;
Hung, Chieh-Tsan
;
Hu, Meng-Hua
;
Wu, Jong-Shinn
A parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas-phase and 27 surface reactions with site-balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiFx and O-2, are found to be appreciable (approximate to 10%) compared to the precursor near the substrate. The predicted density trends, such as CFx+ and CFx (x=1-3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO2 substrate is presented and discussed in detail.