Browsing by Author "Hu, Po-Jung"

Now showing 1 - 2 of 2

Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor
(2007-04-01)
Su, Ke-Hua
;
Hsu, Wei-Chou
;
Lee, Ching-Sung
;
Hu, Po-Jung
;
Hsia, Ru-Shang
A novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (partial derivative V-th/partial derivative T) of -0.807 mV/K and a high-temperature linearity (partial derivative GVS/partial derivative T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3Ga0.7As0.99N0.01(Sb)/GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (g(m,max)) of 94 (109) mS/mm at 450 (300) K.
Investigations on highly stable thermal characteristics of a dilute In(0.2)Ga(0.8)AsSb/GaAs doped-channel field-effect transistor
(2008-04-01)
Su, Ke-Hua
;
Hsu, Wei-Chou
;
Lee, Ching-Sung
;
Hu, Po-Jung
;
Wu, Yue-Han
This work reports for the first time a novel In(0.2)Ga(0.8)AsSb/GaAs heterostructure doped-channel field-effect transistor (DCFET) grown by the molecular beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the DCFET device has been effectively improved by introducing surfactant-like Sb atoms during the growth of the Si-doped InGaAs channel layer. The improved device characteristics include the peak extrinsic transconductance (g(m, max)) of 161.5 mS mm(-1), the peak drain-source saturation current density (IDSS, max) of 230 mA mm(-1), the gate-voltage swing (GVS) of 1.65 V, the cutoff frequency (f(T)) of 12.5 GHz and the maximum oscillation frequency (f(max)) of 25 GHz at 300 K with the gate dimensions of 1.2 x 200 mu m(2). The proposed design has also shown a stable thermal threshold coefficient (partial derivative V(th)/partial derivative T) of -0.7 mV K(-1).