Browsing by Author "Hu, TC"

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Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
(1999-10-15)
Hu, TC
;
Chiu, SY
;
Dai, BT
;
Tsai, MS
;
Tung, IC
A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
(2001-07-01)
Lee, YP
;
Tsai, MS
;
Hu, TC
;
Dai, BT
;
Feng, MS
In this study, we proposed a novel selective Cu metallization method by means of Si chemical mechanical polishing (CMP) and electrochemical Cu contact displacement from a-Si. The galvanic Cu deposition which involves the electrochemical redox reaction between cupric ions and silicon atoms could be carried out at room temperature in the HF aqueous solution. This selective Cu metallization method is promising for overcoming the obstacles in the current damascene process, such as the limitation of depositing comformally Cu seed into high aspect ratio trenches by physical vapor deposition for the following void-free Cu electroplating and nonplanarity issues after multistep CMP, such as Cu dishing and dielectric erosion. (C) 2001 The Electrochemical Society.