Browsing by Author "Huang, Bo-Chao"

Now showing 1 - 7 of 7

A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure
(2016-11-02)
Liu, Heng-Jui
;
Lin, Jheng-Cyuan
;
Fang, Yue-Wen
;
Wang, Jing-Ching
;
Huang, Bo-Chao
A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.
Anisotropic superconductivity induced by periodic multiferroic domain patterns
(2019-12-06)
Huang, Yen-Lin
;
Huang, Bo-Chao
;
Wang, Yan-Ting
;
Xue, Fei
;
Lin, Jheng-Cyuan
The competition between order parameters, such as ferroelectricity, ferromagnetism, and superconductivity, is one of the most fascinating topics in condensed matter physics. Here, we report intriguing anisotropic superconductivity in YBa2Cu3O7-x films induced by a multiferroic, BiFeO3, with periodic domain patterns. The anisotropic superconductivity was investigated by transport measurements and supported by phase-field simulations, and then the detailed local electronic structures were revealed by cross-sectional scanning tunneling microscopy. We found that the oxygen redistribution in YBa2Cu3O7-x modulated by the ferroelectric polarization in BiFeO3 was the key mechanism driving this anisotropic superconductivity. The presented heteroarchitecture of a high-temperature superconductor and a domain-engineered multiferroic provides a new approach to tune superconductivity and offers potential advantages for the design of future multifunctional devices.
Atomic-Scale Evolution of Local Electronic Structure Across Multiferroic Domain Walls
(2011-04-05)
Chiu, Ya-Ping
;
Chen, Yu-Ting
;
Huang, Bo-Chao
;
Shih, Min-Chuan
;
Yang, Jan-Chi
Direct evidence of the electronic configurations across domain walls in BiFeO(3) is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109 degrees domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm.
Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces
(2018-02-01)
Huang, Bo-Chao
;
Yu, Pu
;
Chu, Y. H.
;
Chang, Chia-Seng
;
Ramesh, Ramamoorthy
We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.
Ferroelectric Control of the Conduction at the LaAlO3/SrTiO3 Heterointerface
(2013-06-25)
Vu Thanh Tra
;
Chen, Jhih-Wei
;
Huang, Po-Cheng
;
Huang, Bo-Chao
;
Cao, Ye
Local Conduction at the BiFeO3-CoFe2O4 Tubular Oxide Interface
(1970-01-01)
Hsieh, Ying-Hui
;
Liou, Jia-Ming
;
Huang, Bo-Chao
;
Liang, Chen-Wei
;
He, Qing
"In strongly correlated oxides, heterointerfaces, manipulating the interaction, frustration, and discontinuity of lattice, charge, orbital, and spin degrees of freedom, generate new possibilities for next generation devices. In this study, existing oxide heterostructures are examined and local conduction at the BiFeO3-CoFe2O4 vertical interface is found. In such heteronanostructures the interface cannot only be the medium for the coupling between phases, but also a new state of the matter. This study demonstrates a novel concept on for oxide interface design and opens an alternative pathway for the exploration of diverse functionalities in complex oxide interfaces."
Mapping Band Alignment across Complex Oxide Heterointerfaces
(2012-12-12)
Huang, Bo-Chao
;
Chiu, Ya-Ping
;
Huang, Po-Cheng
;
Wang, Wen-Ching
;
Vu Thanh Tra
In this study, direct observation of the evolution of electronic structures across complex oxide interfaces has been revealed in the LaAlO3/SrTiO3 model system using cross-sectional scanning tunneling microscopy and spectroscopy. The conduction and valence band structures across the LaAlO3/SrTiO3 interface are spatially resolved at the atomic level by measuring the local density of states. This study directly maps out the electronic reconstructions and a built-in electric field in the polar LaAlO3 layer. Results also clearly reveal the band bending and the notched band structure in the SrTiO3 adjacent to the interface. DOI: 10.1103/PhysRevLett.109.246807