Browsing by Author "Huang, C. C."

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A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf Capacitor
(2010-01-01)
Cheng, C. H.
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Huang, C. C.
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Hsu, H. H.
;
Chen, P. C.
;
Chiang, K. C.
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO(3)/TaN and TaN/SrTiO(3)/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.
A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 rf Capacitor
(2010-01-01)
Cheng, C. H.
;
Huang, C. C.
;
Hsu, H. H.
;
Chen, P. C.
;
Chiang, K. C.
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO3/TaN and TaN/SrTiO3/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.
Effects of the catalyst pretreatment on CO2 sensors made by carbon nanotubes
(2008-04-01)
Huang, C. S.
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Huang, B. R.
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Hsiao, C. H.
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Yeh, C. Y.
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Huang, C. C.
A novel CO2 sensor was made by carbon nanotubes (CNTs). The CNTs were synthesized by catalystic thermal chemical vapour deposition at 700 degrees C. Prior to the synthesis, the Fe catalysts were pretreated by H-2 plasma for different times. Two terminal resistance of the as-grown CNTs mat was measured under different CO2 concentrations. It was found that without the catalyst pretreatment, the sensitivity was about 4% when the CNTs mat was exposed to 800 mTorr CO2 concentration. However, with various catalyst pretreatment times of 5, 10, 15 and 20 min, the sensitivity was 3.69%, 6.27%, 9.54%, and 12.1%, respectively. The Raman spectroscopy showed the I-D/I-G decreased from 0.668 to 0.539 as the catalyst pretreatment time increased. The XPS also showed the correlation of surface chemical components with the Raman spectroscopy. The Fe catalyst H-2 plasma pretreatment affected both the graphitization and surface binding sites of CNTs. (C) 2007 Elsevier B.V. All rights reserved.
GaN p-i-n photodetectors with an LT-GaN interlayer
(2008-04-01)
Lin, J. C.
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Su, Y. K.
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Chang, S. J.
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Lan, W. H.
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Huang, K. C.
Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-i-n photodetector, it was found that both the dark current and ideality factor of the p-i-n photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-i-n photocletector with an LT-GaN interlayer was larger than that of the conventional GaN p-i-n photocletector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels.
High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al(2)O(3)-Doped SrTiO(3) MIM Capacitors
(2010-01-01)
Huang, C. C.
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Cheng, C. H.
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Lin, C. W.
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Chang, L. M.
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電子工程學系及電子研究所
In this paper, the impact of Al(2)O(3) incorporation on the electrical characteristics of the SrTiO(3) (STO) metal-insulator-insulator (MIM) capacitor was studied. The Al(2)O(3)-doped STO (STO: Al(2)O(3) = 3:1) MIM provides a high capacitance density (14.6 fF/mu m(2)) and a very low leakage current density (9.2 x 10(-9) A/cm(2) at -1 V) at the same time. The significant enhancement of the conduction band offset and bandgap due to Al(2)O(3) incorporation reduces leakage current largely while maintaining the favorable properties of STO, such as a large high-kappa value, a small temperature coefficient of capacitance, and paraelectricity (no fatigue or aging problem) in the operating temperature range of devices. Meanwhile, we also made a comparison among pure STO, Al(2)O(3)-doped STO, and HfO(2)-doped STO MIM capacitors. Results revealed that STO MIM and HfO(2)-doped STO MIM capacitors both show higher capacitance densities, while the leakage current of the Al(2)O(3)-doped STO MIM is much lower than those of both the STO MIM and HfO(2)-doped STO MIM capacitors, which meets the strict requirement of the International Technology Roadmap for Semiconductors 2018. Therefore, the excellent result suggests that the Al(2)O(3)-doped STO film is a potential candidate material for dynamic random access memory and radio-frequency applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3368671] All rights reserved.
High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al2O3-Doped SrTiO3 MIM Capacitors
(2010-01-01)
Huang, C. C.
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Cheng, C. H.
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Lin, C. W.
;
Chang, L. M.
;
電子工程學系及電子研究所
In this paper, the impact of Al2O3 incorporation on the electrical characteristics of the SrTiO3 (STO) metal-insulator-insulator (MIM) capacitor was studied. The Al2O3-doped STO (STO: Al2O3 = 3:1) MIM provides a high capacitance density (14.6 fF/mu m(2)) and a very low leakage current density (9.2 x 10(-9) A/cm(2) at -1 V) at the same time. The significant enhancement of the conduction band offset and bandgap due to Al2O3 incorporation reduces leakage current largely while maintaining the favorable properties of STO, such as a large high-kappa value, a small temperature coefficient of capacitance, and paraelectricity (no fatigue or aging problem) in the operating temperature range of devices. Meanwhile, we also made a comparison among pure STO, Al2O3-doped STO, and HfO2-doped STO MIM capacitors. Results revealed that STO MIM and HfO2-doped STO MIM capacitors both show higher capacitance densities, while the leakage current of the Al2O3-doped STO MIM is much lower than those of both the STO MIM and HfO2-doped STO MIM capacitors, which meets the strict requirement of the International Technology Roadmap for Semiconductors 2018. Therefore, the excellent result suggests that the Al2O3-doped STO film is a potential candidate material for dynamic random access memory and radio-frequency applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3368671] All rights reserved.
High Performance Ir/TiPrO/TaN MIM Capacitors for Analog ICs Application
(2008)
Huang, C. C.
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Cheng, C. H.
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Chin, Albert
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Chou, C. P.
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電子工程學系及電子研究所
In this paper, we demonstrate high quality material TiPrO and high density Ti(x)Pr(1-x)O (x similar to 0.67) metal-insulator-metal (MIM) capacitors using high work function (similar to 5.3 eV) Ir top electrode. Very low leakage current of 7x10(-9) A/cm(2) at -1 V and high 16 fF/mu m(2) capacitance density are achieved for 400 degrees C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/mu m(2) density and J/(C.V) <7 fA/(pF.V). Furthermore, the improved high 20 fF/mu m(2) capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2x10(-7) A/cm(2) is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.
Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode
(2008-10-01)
Cheng, C. H.
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Pan, H. C.
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Huang, C. C.
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Chou, C. P.
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Hsiao, C. N.
We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 x 10(-6) A/cm(2) (at -1 V) at a 28 fF/mu m(2) capacitance density.
Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing
(2007)
Huang, C. C.
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Cheng, C. H.
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Chin, Albert
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Chou, C. P.
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機械工程學系
We have investigated the effects of N+ plasma treatment and oxygen annealing on Ni/TiNiO/TaN capacitors. The postdeposition annealing of TiNiO under oxygen ambient increases the capacitance density but trades off the increased leakage current. This leakage current can be largely decreased by applying an optimized N+ plasma treatment. At high capacitance density of 17.1 fF/mu m(2), a low leakage current of 7.7 x 10(-6) A/cm(2) at 1 V is obtained indicating good potential integrated circuit application. (C) 2007 The Electrochemical Society.
New understanding of metal-insulator-metal (MIM) capacitor degradation behavior
(2007)
Hung, Chi-Chao
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Oates, Anthony S.
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Lin, H. C.
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Chang, Percy
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Wang, J. L.
This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition
(2011-12-01)
Lin, D. Y.
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Huang, T. P.
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Kao, Y. C.
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Huang, C. C.
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Kuo, H. C.
In this study, we present the optical characteristics of A-plane ZnO/ZnMgO multiple quantum wells (MQWs) with different well widths grown on R-plane sapphire substrates by pulsed laser deposition (PLD). The energy gaps of ZnO and ZnMgO have been observed by photoluminescence (PL) and absorption spectra. The electrons confined in the ZnO wells transit from the electron ground sub-band to the heavy-hole ground sub-band (noted as 11H) located at 3.40 and 3.57 eV for the ZnO/ZnMgO MQWs samples with well widths of 5.6 and 1.2 nm, respectively. The strong anisotropic polarization characteristic has been studied by polarization-dependent PL measurements. For comparison, we also calculated the transition energies of different well thicknesses varying from 1 to 6 nm. The theoretical results match quite well with the experimental values and revealing the suitable conduction band offset Q(c)=0.6. The temperature dependence of PL spectra is being investigated, in the temperature range between 10 and 300 K. (C) 2011 Elsevier B.V. All rights reserved.
Polarization Switching in 1.3-mu m Quantum Dot Vertical Cavity Surface Emitting Lasers
(2009)
Wu, F. M.
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Lan, R. L.
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Peng, P. C.
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Huang, C. C.
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Peng, R. Y.
This work for the first time, experimentally demonstrates the polarization switching in 1.3 mu m quantum dot VCSEL. The polarization switching in quantum dot VCSEL is achieved by adjusting the optical injection power. (C)2009 Optical Society of America
RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density
(2006-09-01)
Huang, C. C.
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Chiang, K. C.
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Kao, H. L.
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Chin, Albert
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Chen, W. J.
A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate
(2011)
Huang, C. C.
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Chang, S. J.
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Kuo, C. H.
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Wu, C. H.
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Ko, C. H.
The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO(2) recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95% using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3569753] All rights reserved.
Surface-induced ordering effect in one antiferroelectric liquid crystal compound
(2009-03-01)
Pan, LiDong
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Wang, Shun
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Hsu, C. S.
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Huang, C. C.
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應用化學系
Null transmission ellipsometer was employed to study the surface-induced tilt transition of an antiferroelectric liquid crystal compound in the bulk smectic-A (SmA) temperature range. The data of the surface tilt transition can be fitted with an extended mean-field model. These results indicate the transition is near a mean-field tricritical point. The surface layers' tilt directions are found to be in different planes several degrees above the bulk SmA-SmC alpha* transition.
Surface-Surface Interaction in Smectic Liquid Crystal Films
(2012-01-11)
Pan, LiDong
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Hsu, C. S.
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Huang, C. C.
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應用化學系
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Department of Applied Chemistry
Null transmission ellipsometry was employed to study the field induced transition of the surface arrangements in freestanding films of smectic liquid crystals. The interlayer interaction between the two surfaces obtained from the threshold voltage for the transition is found to be antiferroelectric and is quasilong ranged. The possible microscopic origins of the measured interaction and its relevance to the interlayer interaction in antiferroelectric liquid crystal materials are discussed.
Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring
(2009-05-04)
Lin, C. H.
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Lin, H. S.
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Huang, C. C.
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Su, S. K.
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Lin, S. D.
We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.
Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors
(2007)
Chiang, K. C.
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Huang, C. C.
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Pan, H. C.
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Hsiao, C. N.
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Lin, J. W.
An unavoidable drawback when using high-kappa dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high-kappa TiHfO capacitors. This avoids sacrificing the overall kappa value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits. (c) 2007 The Electrochemical Society.
Thickness Dependent Phase Behavior of Antiferroelectric Liquid Crystal Films
(2009-10-30)
Pan, LiDong
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Wang, Shun
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Hsu, C. S.
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Huang, C. C.
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應用化學系
Free standing films of a liquid crystal compound with simple surface enhanced order were studied. The resultant phase diagram demonstrates that (1) the short helical pitch smectic-C-alpha* phase disappears below a film thickness of 10 layers, and (2) the temperature window of a distorted 4 layer smectic-C-FI2* phase increases dramatically upon decreasing film thickness. The experimental findings were attributed to the reduced dimensionality and enhanced surface effects in thin films. The results of the smectic-C-alpha* phase are consistent with what have been reported for helically ordered magnetic thin films, with a noticeable difference due to the opposite effect of the surface on ordering in the two systems.
Unique pitch evolution in the Smectic-C-alpha(*) phase
(2007-08-17)
Liu, Z. Q.
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McCoy, B. K.
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Wang, S. T.
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Pindak, R.
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Caliebe, W.
Employing resonant x-ray diffraction, we observed unique pitch evolutions in the smectic-C-alpha* phase in mixtures of two antiferroelectric liquid crystals. Our results show that the pitch in this phase continuously evolves across 4 layers, contradicting a theoretical model that predicts that the smectic-C-FI2* phase intervenes in the smectic-C-alpha* phase. The phase sequences we found can be explained by another model that includes one type of long-range interaction among smectic layers.