Browsing by Author "Huang, C. H."

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Applying Social Marketing Theory to Develop Retargeting and Social Networking Advertising Website
(2015)
Yang, K. C.
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Huang, C. H.
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Yang, Conna
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Tsai, C. W.
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經營管理研究所
Retargeting advertising is a new technique applied for online marketing. In the past few years, retargeting advertising had been used in online advertisement. It explored the product information for visitors and focused advertising spending on people who are already familiar with your brand and have recently demonstrated interest. This study applies Social Marketing Theory to develop retargeting advertising system and combines it with social networking advertising. We also develop an E-commerce website to include these two kinds of advertising. Our experimental website was developed by Microsoft ASP. Net 4.0 in C# and JavaScript program. We also use focus group analysis to analyze the conceptual model of our study. Our findings can provide references for practitioners and researchers.
Coaxial transitions for CPW-to-CPW flip chip interconnects
(2007-08-16)
Wu, W. C.
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Chang, E. Y.
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Huang, C. H.
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Hsu, L. H.
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Starski, J. P.
A novel coaxial transition for CPW-to-CPW flip chip interconnect is presented and experimentally demonstrated. To realise the coaxial transition on the CPW circuit, benzocyclobutene was used as the interlayer dielectric between the vertical coaxial transition and the CPW circuit. The coaxial interconnect structure was successfully fabricated and RF characterised to 67 GHz. The structure showed excellent interconnect performance from DC up to 55 GHz with low return loss below 20 dB and low insertion loss less than 0.5 dB even when the underfill was applied to the structure.
Consumer Attitudes Toward Online Video Advertising: An Empirical Study on YouTube as Platform
(2014-01-01)
Yang, K. C.
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Yang, C.
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Huang, C. H.
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Shih, P. H.
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Yang, S. Y.
The usage of Internet is getting widespread, and the service of online video is getting more and more popular. The revenue of the web service providers comes mostly from the advertisements. This study investigates the attitudes toward the advertisements while watching online videos in YouTube. We followed the research of users' attitudes toward advertisements (Brackett & Carr, 2001) and combined it with the theory of reasoned action and the flow theory in the psychology. This study investigates the factor affecting attitudes toward advertisements and the influence to behaviors. Our findings show that the model explained most of the variance of attitudes toward advertisements in sites providing services of online videos indicating that the model is confirmed in the situation of online video advertising. The conclusion and managerial implications have further discussions.
Convexification strategies for solving the Nonlinear sum of ratios problem
(2005)
Huang, C. H.
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Li, H. L.
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資訊管理與財務金融系註：原資管所+財金所
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Department of Information Management and Finance
This paper presents a new method for solving nonlinear sum of ratios problem (NSRP) by the convexification strategies to obtain a global optimum. First we transform the fractional functions into the signomial terms with introducing positive variables. Then by referring to the proposed convexification strategies, all signomial terms are converted into convex and concave terms. The concave terms are then represented by piecewise linearization method. A numerical example is illustrated to show the usefulness of the proposed method.
Defect states investigation in poly(2-methoxy,5-(2 ' ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)
(2006-07-26)
Nguyen, T. P.
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Le Rendu, P.
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Gaudin, O.
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Lee, A. J. T.
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Jackman, R. B.
in this study, application of the charge based Deep Level Transient Spectroscopy (Q-DLTS) has been extended to poly(2-methoxy,5-(2ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) single layer diodes, whose cathode consisted of aluminium and anode of indium tin oxide (ITO). The results reveal a broad Q-DLTS spectrum, with at least two maxima, consistent with a complex distribution of trap states. Only the Q-DLTS maximum with the shortest relaxation time could be fully resolved over the temperature range used here (100-300 K), yielding activation energies and capture cross sections in the ranges 0.3-0.4 eV and 10(-20) 10(-18) cm(2), respectively. It will be shown that this energy level is likely related to a majority-carrier (hole) trap, consistent with a Poole-Frenkel injection mechanism and p-type doping of the MEH-PPV film. The origin of the second (non-resolved) Q-DLTS peak will also be discussed. (c) 2005 Elsevier B.V. All rights reserved.
Effect of Mn substitution on electronic structure of Ca(9)Y(PO(4))(7):Eu(2+), Mn(2+) phosphor determined by X-ray absorption spectroscopy
(2011-10-27)
Lu, Y. R.
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Huang, C. H.
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Chen, T. M.
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Lin, J. H.
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Ma, Y. R.
The single-composition Ca(9)Y(PO(4))(7):Eu(2+), Mn(2+) phosphors were synthesized by a solid-state reaction. The luminescent properties and electronic structures were investigated by photoluminescence (PL) and X-ray absorption near-edge structure (XANES). The PL demonstrated energy transfer and a red-shift as the Mn doping level was increased. The energy transfer is ascribed to charge transfer between Eu and Mn. The change of the PL intensity is caused by the increased O 2p-Mn 3d hybridization. The narrowing of the band gap, which finding is supported by the red-shift, is responsible for the formation of the Mn-related states close to the conduction band minimum. (C) 2011 Elsevier B.V. All rights reserved.
Effect of Mn substitution on electronic structure of Ca9Y(PO4)(7):Eu2+, Mn2+ phosphor determined by X-ray absorption spectroscopy
(2011-10-27)
Lu, Y. R.
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Huang, C. H.
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Chen, T. M.
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Lin, J. H.
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Ma, Y. R.
The single-composition Ca9Y(PO4)(7):Eu2+, Mn2+ phosphors were synthesized by a solid-state reaction. The luminescent properties and electronic structures were investigated by photoluminescence (PL) and X-ray absorption near-edge structure (XANES). The PL demonstrated energy transfer and a red-shift as the Mn doping level was increased. The energy transfer is ascribed to charge transfer between Eu and Mn. The change of the PL intensity is caused by the increased O 2p-Mn 3d hybridization. The narrowing of the band gap, which finding is supported by the red-shift, is responsible for the formation of the Mn-related states close to the conduction band minimum. (C) 2011 Elsevier B.V. All rights reserved.
Genetically closely related azole-resistant Candida tropicalis in environments can be a threat to healthcare
(2018-06-01)
Zhou, Z. L.
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Tsai, J. N.
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Tseng, M. N.
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Liu, H. L.
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Lin, C. C.
Influence of oxygen flow rate on photocatalytic TiO2 films deposited by rf magnetron sputtering
(2012-02-01)
Chiou, A. H.
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Kuo, C. G.
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Huang, C. H.
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Wu, W. F.
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Chou, C. P.
Titanium dioxide (TiO2) thin films having anatase (1 0 1) crystal structure were prepared on non-alkali glass substrates by rf (13.56 MHz) magnetron sputtering using a TiO2 ceramic target under various oxygen partial pressures. At a fixed substrate temperature of 400 A degrees C and total gas pressure of 1 Pa after 3 h deposition. Effects of oxygen partial pressure on the structural, surface morphology, and photocatalytic activities of the TiO2 thin films were investigated. We performed both photoinduced decomposition of methylene blue (MB) and photoinduced hydrophilicity under UV light illumination. The XRD patterns exhibited a broad-hump shape indicating the amorphous structure of TiO2 thin films. The results showed that when the [O-2/(Ar + O-2)] flow rate increased to 50%, the photoinduced decomposition of MB and photoinduced hydrophilicity were enhanced. The water contact angle after 9 min UV illumination was approximately 4.5A degrees, and the methylene blue (MB) solution decomposition from 12 down to 3.34 mu mol/L for 240 min UV irradiation.
Novel Silicon Surface Pre-Treatment (SSPT) technique for CMOS device performance boosting
(2008-01-01)
Lee, Da-Yuan
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Chen, C. C.
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Huang, C. H.
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Lim, P. S.
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Chan, M. H.
In this paper, a novel surface treatment technique using Silicon Surface Pre-Treatment (SSPT) technique to boost high performance CMOS circuit is reported. This approach provides a smooth silicon surface and extends the effective channel width to enhance device performance on both N and PMOSFET. In this work, a smooth and rounded active area (AA) surface was successfully fabricated. Using this technique, we demonstrated a significant device boost of 15% and 7% on small dimension N and PMOSFET, respectively. These achievements were demonstrated without negative impact on GOI and NBTI.
Outsourcing in Business and Management Studies: A Co-Citation Analysis
(2017-01-01)
Yang, K. C.
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Yang, C.
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Huang, C. H.
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Lee, T. C.
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資訊管理與財務金融系註：原資管所+財金所
Outsourcing is a critical issue for an enterprise in the past two decades. It extended from the local operation service to the global service and influenced enterprise decision making process. Companies need to create competitive advantage from cost reduction, especially via outsourcing their operational activities. The purpose of this article is to bring up a visual mapping of two-dimensional intellectual structure and to recognize the subfields of the outsourcing through co-citation analysis. In this study, we collected some papers from ISI Web of Knowledge (WoS) database in the outsourcing area. We rank the outsourcing documents by times cited and collect the top 60 articles. Also, we use multidimensional scaling (MDS) and clustering techniques (CT) to create the two-dimensional maps to show the intellectual structure of outsourcing dynamically. The conclusion would provide for the researchers' reference.
Structural and optoelectronic properties of Al-doped zinc oxide films deposited on flexible substrates by radio frequency magnetron sputtering
(2011-09-01)
Tseng, C. H.
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Huang, C. H.
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Chang, H. C.
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Chen, D. Y.
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Chou, C. P.
Al-doped zinc oxide (AZO) thin films were deposited onto flexible polyethylene terephthalate substrates, using the radio frequency (RF) magnetron sputtering process, with an AZO ceramic target (The Al(2)O(3) content was about 2 wt.%). The effects of the argon sputtering pressure (in the range from 0.66 to 2.0 Pa), thickness of the Al buffer layer (thickness of 2, 5, and 10 nm) and annealing in a vacuum (6.6 x 10(-4) Pa), for 30 min at 120 degrees C, on the morphology and optoelectronic performances of AZO films were investigated. The resistivity was 9.22 x 10(-3) Omega cm, carrier concentration was 4.64 x 10(21) cm(-3), Hall mobility was 2.68 cm(2)/V s and visible range transmittance was about 80%, at an argon sputtering pressure of 2.0 Pa and an RF power of 100 W. Using an Al buffer decreases the resistivity and optical transmittance of the AZO films. The crystalline and microstructure characteristics of the AZO films are improved by annealing. (C) 2011 Elsevier BM. All rights reserved.
Structure and properties of GZO thin films grown on ZnO buffer layers
(2011-02-01)
Chu, C. Y.
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Huang, C. H.
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Kao, L. M.
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Chou, C. P.
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Hsu, C. Y.
Thin gallium-doped zinc oxide (in GZO the Ga(2)O(3) contents are approximately 3 wt%) films having different ZnO buffer layers were deposited using radio frequency (rf) magnetron sputtering. The use of a grey-based Taguchi method to determine the processing parameters of ZnO buffer layer deposition has been studied by considering multiple performance characteristics. A Taguchi method with an L(9) orthogonal array, signal-to-noise (S/N) ratio, and analysis of variance (ANOVA) is employed to investigate the performance characteristics in the deposition operations. The effect and optimization of ZnO buffer deposition parameters (rf power, sputtering pressure, thickness, and annealing) on the structure, morphology, electrical resistivity, and optical transmittance of the GZO films are studied. Annealing treatment and reduction in thickness resulted in a decrease in root-mean-square (RMS) surface roughness of the ZnO buffer layer. Using the optimal ZnO buffer layer obtained by the application of the grey-based Taguchi method, the electrical resistivity of GZO films was decreased from 2.94 x 10(-3) to 9.44 x 10(-4) Omega cm and the optical transmittance in the visible region was slightly increased from 84.81% to 85.82%. (C) 2010 Elsevier Ltd. All rights reserved.
Study of trap states in polyfluorene based devices by using TSC technique
(2008-08-30)
Renaud, C.
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Huang, C. H.
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Lee, C. W.
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Le Rendu, P.
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Nguyen, T. P.
The trap states in poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF-N-Ph) based light emitting diodes have been investigated by using the thermally stimulated current (TSC) technique in the temperature range of 90-320 K. The studied structure consisted of indium-tin-oxide/polyethylene-dioxythiophene: polystyrene-sulfonate/PF-N-Ph/Al. Four traps centers denoted as A, B, C, and D trap types have been identified with densities in the range of 10(16)-10(17) cm(-3). Study of the dependence of TSC characteristics on the device polarity suggested that the A, C and D type traps are electron traps while the B type traps are hole traps. They can be described by Gaussian distributions centered on mean trap levels. (c) 2008 Elsevier B.V. All rights reserved.
Study of traps in polydiacetylene based devices using TSC technique
(2006-12-01)
Renaud, C.
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Huang, C. H.
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Zemmouri, M.
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Le Rendu, P.
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Nguyen, T. P.
Trap parameters in poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F) based devices have been investigated by using the thermally stimulated current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M, where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal at least three TSC peaks in devices denoted as peaks A, B and C. Comparing trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap types to hole-like traps and C type traps to electron-like traps. The trap densities are in the range of 10(15)-10(17) cm(-3) and the trap levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C type traps).