Browsing by Author "Huang, C. T."

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Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS
(2008-02-15)
Chenga, P. L.
;
Liao, C. I.
;
Chien, C. C.
;
Yang, C. L.
;
Ting, S. F.
Locally strained Si technology using embedded SiGe has been used to improve pMOSFET device performance through hole mobility enhancement. Embedded SiGe is achieved by selectively growing epitaxial SiGe film in recessed Si pMOSFET source and drain areas. Prior to selective SiGe epi growth, a thin layer of Si seed was employed to help nucleate following low-temperature selective SiGe epitaxial film in recessed. source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved device performance. (c) 2007 Elsevier B.V. All rights reserved.
The impact of high-voltage drift n-well and shallow trench isolation layouts on electrical characteristics of LDMOSFETs
(2007)
Huang, C. T.
;
Tsui, Bing-Yue
;
Liu, Hsu-Ju
;
Lin, Geeng-Lih
;
電子工程學系及電子研究所
The impact of the high-voltage drift n-well (HVNW) and shallow trench isolation (STI) regions on the electrical characteristics of 32V symmetry and asymmetry n-channel laterally diffused drain MOSFET (N-LDMOS) were evaluated. Asymmetry structure has higher threshold voltage owing to the transient enhancement diffusion (TED) of boron near source region. The smaller extension of the HVNW to STI (E(HVNW-STI) for asymmetry structure exhibits a wider safe-operating-area (SOA) from the hot-carrier reliability point of view. To obtain a higher on-current, the EHVNW-STI should be optimized because the steep sidewall of the STI may force current to flow through a longer distance in the HVNW. Finally, increase of EHVNW-STI cannot efficiently increase breakdown voltage.