Browsing by Author "Huang, CK"

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Device transfer technology by backside etching (DTBE) for poly-Si thin-film transistors on glass/plastic substrate
(2003-09-15)
Wang, SC
;
Yeh, CF
;
Huang, CK
;
Dai, YT
;
電子工程學系及電子研究所
This work presents a novel method entitled "device transfer by backside etching (DTBE)" for transferring thin-film devices from Si wafers to a glass or plastic substrate. First, high performance poly-Si thin-film transistors (TFTs) were fabricated on a Si wafer and then adhered to glass or plastic substrates. The remaining Si was removed delicately using wafer. backside chemical-mechanical polishing (CMP) and wet chemical etching. The devices after transferring exhibit comparable electrical characteristics to the original ones on Si substrates. The new transfer scheme has quite attractive applications for fabricating high-quality displays on low-cost substrates with low melting temperatures.
Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes
(2000-02-15)
Chiou, SW
;
Lee, CP
;
Huang, CK
;
Chen, CW
;
電子工程學系及電子研究所
A structure for high brightness light-emitting diodes (LEDs) is demonstrated. A distributed Bragg reflector (DBR) is used to enhance the quantum efficiency of the LEDs. This unique DBR uses a composite structure that consists of two DBRs to provide both high reflectivity and wide angle reflection. For 590 nm (amber range) AlGaInP LEDs, the quantum efficiency is increased to 5.05% by using this composite DBR structure. This result is much better than those obtained from conventional DBRs, and is comparable to that of wafer bonded AlGaInP LEDs. (C) 2000 American Institute of Physics. [S0021-8979(00)01704-7].