Browsing by Author "Huang, Chen-Shuo"

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Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors
(2017-03-01)
Chen, Guan-Fu
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Chang, Ting-Chang
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Chen, Hua-Mao
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Chen, Bo-Wei
;
Chen, Hong-Chih
This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.
Anomalous Gate-Edge Leakage Induced by High Tensile Stress in NMOSFET
(2008-11-01)
Liu, Po-Tsun
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Huang, Chen-Shuo
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Lim, Peng-Soon
;
Lee, Da-Yuan
;
Tsao, Shueh-Wen
Anomalously high gate tunneling current, induced by high-tensile-stress memorization technique, is reported in this letter. Carrier-separation measurement method shows that the increased gate tunneling current is originated from the higher gate-to-source/drain (S/D) tunneling current, which worsens when channel length is getting shorter. Also, the device with enhanced tensile strain exhibits 9% higher gate-to-S/D overlapping capacitance. These data indicate that the anomalously high gate tunneling current could be attributed to the high tensile strain that induces the effects of excessive lightly doped dopant diffusion and higher gate-edge damage. The proposed inference is confirmed by channel hot-electron stress.
Effect of high-pressure H(2)O treatment on elimination of interfacial GeO(X) layer between ZrO(2) and Ge stack
(2011-08-22)
Huang, Chen-Shuo
;
Liu, Po-Tsun
;
光電工程學系
;
顯示科技研究所
;
Department of Photonics
This investigation demonstrates the effect of high-pressure H(2)O treatment on the elimination of the interfacial germanium suboxide (GeO(X)) layer between ZrO(2) and Ge. The formation of GeO(X) interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H(2)O treatment eliminates the interfacial GeO(X) layer. The physical mechanism involves the oxidation of non-oxidized Zr with H(2)O and the reduction of GeO(X) by H(2). Treatment with H(2)O reduces the gate-leakage current of a ZrO(2)/Ge capacitor by a factor of 1000. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627187]
Effect of high-pressure H2O treatment on elimination of interfacial GeOX layer between ZrO2 and Ge stack
(2011-08-22)
Huang, Chen-Shuo
;
Liu, Po-Tsun
;
光電工程學系
;
顯示科技研究所
;
光電工程研究所
This investigation demonstrates the effect of high-pressure H2O treatment on the elimination of the interfacial germanium suboxide (GeOX) layer between ZrO2 and Ge. The formation of GeOX interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H2O treatment eliminates the interfacial GeOX layer. The physical mechanism involves the oxidation of non-oxidized Zr with H2O and the reduction of GeOX by H-2. Treatment with H2O reduces the gate-leakage current of a ZrO2/Ge capacitor by a factor of 1000. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627187]
Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
(2010-03-15)
Liu, Po-Tsun
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Huang, Chen-Shuo
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Huang, Yi-Ling
;
Lin, Jing-Ru
;
Cheng, Szu-Lin
Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)/germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)/Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state.
Impact of Negative-Bias-Temperature-Instability on Channel Bulk of Polysilicon TFT by Gated PIN Diode Analysis
(2011)
Huang, Chen-Shuo
;
Liu, Po-Tsun
;
光電工程學系
;
顯示科技研究所
;
Department of Photonics
In this study, negative-bias-temperature-instability (NBTI) stress induced interface, and bulk states of polycrystalline silicon (poly-Si) film were identified by using gated poly-Si P-intrinsic-N (PIN) diodes. The generation of reverse current was proportional to the quantity of defects in the poly-Si of the gated diode device. Experimental results revealed NBTI degradation has a spatial distribution in the poly-Si film and demonstrated that the resultant generation of poly-Si bulk states causes the elevated drain leakage current of thin-film transistors (TFTs). We conclude that grain boundaries, with enriched hydrogenated silicon bonds in the bulk of poly-Si, interact electrochemically with hole-carriers. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3551463] All rights reserved.
Investigation on thin-film-transistors with a transparent material Zinc-Oxide layer with DC sputter deposition system
(2007)
Chou, Yi-Teh
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Huang, Chen-Shuo
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Shiau, S. J.
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Liu, Po-Tsun
;
Chu, Li-wei
We have successfully developed a transparent thin film transistor (TTFT) with a novel material Zinc Oxide (ZnO) as semiconductor layer. The use of ZnO-based material can increases the field-effect mobility of TFT devices, the opening of AMLCD panel and releases the issue of photo-excited leakage current. In this work, the ZnO film was deposited in DC glow discharge plasma sputter system which is suitable for industrial technique and novel method in ZnO-base TFT process. With changing mixture gas flow, we can adjust the rate of Zn/ZnO mixture, Zn1+xO, and ZnO and get a suitable condition for TFT device. FTIR, XRD, SEM and AFM were utilized to analyze the characteristic of ZnO films.
Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides
(2008-01-14)
Liu, Po-Tsun
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Huang, Chen-Shuo
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Lee, D. Y.
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Lim, P. S.
;
Lin, S. W.
The dependence of the gate tunneling current (J(g)) on nitrogen profile (N profile) within an ultrathin silicon oxynitride film is reported. It was found that gate tunneling current is dependent on N profile, even with equal oxide thickness and nitrogen dosage. Gate tunneling current increased with steeper N profile, and it had higher sensitivity for p-type metal-oxide-semiconductor field-effect transistor (MOSFET) than n-type MOSFET. A direct tunneling model based on Wentzel-Kramers-Brillouin approximation has been proposed. The model described the influence of N profiles on gate tunneling current through local change of dielectric constant, band bending, and effective mass. Also, it reasonably explained the different J(g) sensitivity in n-/p-MOSFETs, a phenomenon that has not been addressed in earlier publications. (c) 2008 American Institute of Physics.
Spin-on ZnO thin film transistors with oxidation treatment
(2007)
Huang, Chen-Shuo
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Chou, Yi-Teh
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Liu, Po-Tsun
;
Chung, Wan-Fang
;
Huang, Chien-Jui
The ZnO TFTs was fabricated by spin-on method and investigated by modulating deposition environments. It was discovered that the conductivity of ZnO TFTs can be obviously changed by modulating curing temperature and the performances can be improved by incorporating oxygen.