Browsing by Author "Huang, Cheng-Tang"
Now showing 1 - 2 of 2
- Results Per Page
- Sort Options
Item type:Item, Effect of SiO(2) Additive As Inhibitor on Crystalline Structure and H(2)S Sensing Performance of CuO-Au-SnO(2) Thin Film Prepared by Liquid Phase Deposition(2010-01-01) ;Chiou, Jin-Chern ;Tsai, Shang-Wei ;Chiou, Jin-Chern ;Huang, Cheng-Tang電機工程學系In situ SiO(2)-doped SnO(2) thin films have been prepared by liquid phase deposition method. The effect of SiO(2) additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO(2)-doped CuO-Au-SnO(2) gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO(2) gas sensor. However, the doped CuO-Au-SnO(2) gas sensors (Si/Sn = 0.33) can obtained better sensitivity ( S = 67 for 2ppm) and response time (t90% < 3 s).Item type:Item, Effect of SiO2 Additive As Inhibitor on Crystalline Structure and H2S Sensing Performance of CuO-Au-SnO2 Thin Film Prepared by Liquid Phase Deposition(2010-01-01) ;Chiou, Jin-Chern ;Tsai, Shang-Wei ;Chiou, Jin-Chern ;Huang, Cheng-Tang電子工程學系及電子研究所In situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO2 gas sensor. However, the doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.33) can obtained better sensitivity ( S = 67 for 2ppm) and response time (t90% < 3 s).