Browsing by Author "Huang, Chin-Chuan"

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An analysis of the formability of aluminum/copper clad metals with different thicknesses by the finite element method and experiment
(2010-08-01)
Tseng, Huang-Chi
;
Hung, Chinghua
;
Huang, Chin-Chuan
;
交大名義發表
;
機械工程學系
In this research, the possibility of applying forming limit diagrams to the formability and fracture prediction of clad metal sheets is examined. The forming limits of clad metal sheets with different thickness combinations (e.g., A1050 1.0, 1.5, 2.0 mm/C1100 1.0 mm) are investigated via forming limits test (punch stretching tests). The true stress-strain curves of Al/Cu clad metal sheets are obtained through tensile tests. Using the experimental forming limit diagrams and the stress-strain curves, the fracture prediction of clad metal sheets are simulated by finite element analysis. Moreover, deep drawing tests are carried out to compare the experimental with the numerical results. These results can verify the accuracy of finite element model. Finally, significant differences in formability are found, and comparisons of the fracture prediction of clad metals with different initial thickness ratios are analyzed both numerically and experimentally.
Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
(2010-07-01)
Su, Nai-Chao
;
Wang, Shui-Jinn
;
Huang, Chin-Chuan
;
Chen, Yu-Han
;
Huang, Hao-Yuan
A flexible thin-film transistor (TFT) was made by integrating a high-kappa HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm(2)/V . s, and an acceptable ON/OFF current ratio of 2 x 10(5). The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.
The Role of High-kappa TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
(2010)
Su, Nai-Chao
;
Wang, Shui-Jinn
;
Huang, Chin-Chuan
;
Chen, Yu-Han
;
Huang, Hao-Yuan
In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Ti(x)Hf(1-x)O (x = 0.63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1 cm(2) V(-1) s(-1), and an ON/OFF current ratio of 10(5). The small subthreshold swing and low positive threshold voltage are attributed to the higher value of kappa of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications. (C) 2010 The Japan Society of Applied Physics