Browsing by Author "Huang, Chin-Wen"

Now showing 1 - 3 of 3

Interfacial reactions between Cu and SnAgCu solder doped with minor Ni
(2015-02-15)
Cheng, Hsi-Kuei
;
Huang, Chin-Wen
;
Lee, Hsuan
;
Wang, Ying-Lang
;
Liu, Tzeng-Feng
The interfacial reactions between Cu and SnAgCu-based solders were investigated. Two types of SnAgCu-based solders were used, one was Sn-1.0Ag-0.5Cu (SAC105) and the other was Sn-1.2Ag-0.5Cu-0.05Ni (LF35), where the composition was in wt.%. The addition of Ni in the SnAgCu-based solder was found to have significant effects on the morphological evolution and growth of the Cu6Sn5 and Cu3Sn phases formed at the solder/Cu interfaces. At the Ni-added LF35/Cu interface after liquid/solid reaction at 260 degrees C,the Cu6Sn5 phase presented a microstructure with a much smaller grain size. During subsequent solid/solid reaction at 150 and 200 degrees C, the growth of the Cu6Sn5 phase was significantly enhanced at the LF35/Cu interface but that of the Cu3Sn phase was inhibited. A potential mechanism was proposed to explain the effects of Ni addition on the solder/Cu interfacial reactions. (C) 2014 Elsevier B. V. All rights reserved.
Multilevel resistive switching in Ti/Cu(x)O/Pt memory devices
(2010-12-01)
Wang, Sheng-Yu
;
Huang, Chin-Wen
;
Lee, Dai-Ying
;
Tseng, Tseung-Yuen
;
Chang, Ting-Chang
The multilevel resistive switching (RS) behaviors of the Ti/Cu(x)O/Pt device were investigated by controlling the operated parameters of current and voltage bias in this study. We demonstrated that at least five-level memory states for data storage could be determined by controlling the current compliance, the span of voltage sweeping, and the amplitude of voltage pulse imposed on the memory device. During the dc voltage sweeping mode, not only the multilevel ON-states but also the multilevel OFF-states were achieved for the multilevel storage. The RS mechanism of the Ti/Cu(x)O/Pt device is proposed to be related to the formation/rupture of the conducting filaments, arising from the interfacial oxygen ion migration between the Ti top electrode and Cu(x)O films. Moreover, a possible conduction scenario for the multilevel RS behaviors is also suggested. Owing to all the multilevel memory states are distinguishable and possess the nondestructive readout property, it implies that the Ti/Cu(x)O/Pt device has the promising potential for the future multilevel-capability memory cell application. (c) 2010 American Institute of Physics. [doi:10.1063/1.3518514]
Multilevel resistive switching in Ti/CuxO/Pt memory devices
(2010-12-01)
Wang, Sheng-Yu
;
Huang, Chin-Wen
;
Lee, Dai-Ying
;
Tseng, Tseung-Yuen
;
Chang, Ting-Chang
The multilevel resistive switching (RS) behaviors of the Ti/CuxO/Pt device were investigated by controlling the operated parameters of current and voltage bias in this study. We demonstrated that at least five-level memory states for data storage could be determined by controlling the current compliance, the span of voltage sweeping, and the amplitude of voltage pulse imposed on the memory device. During the dc voltage sweeping mode, not only the multilevel ON-states but also the multilevel OFF-states were achieved for the multilevel storage. The RS mechanism of the Ti/CuxO/Pt device is proposed to be related to the formation/rupture of the conducting filaments, arising from the interfacial oxygen ion migration between the Ti top electrode and CuxO films. Moreover, a possible conduction scenario for the multilevel RS behaviors is also suggested. Owing to all the multilevel memory states are distinguishable and possess the nondestructive readout property, it implies that the Ti/CuxO/Pt device has the promising potential for the future multilevel-capability memory cell application. (c) 2010 American Institute of Physics. [doi:10.1063/1.3518514]