Browsing by Author "Huang, Ching-Chien"

Now showing 1 - 3 of 3

Effect of Ta(2)O(5) Doping on Electrical Characteristics of SrTiO(3) Metal-Insulator-Metal Capacitors
(2009-08-01)
Huang, Ching-Chien
;
Cheng, Chun-Hu
;
Liou, Bo-Heng
;
Yeh, Fon-Shan
;
Chin, Albert
The effect of Ta(2)O(5) doping on electrical characteristics of SrTiO(3) (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta(2)O(5)-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V(2) and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physics
Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal-Insulator-Metal Capacitors
(2009-08-01)
Huang, Ching-Chien
;
Cheng, Chun-Hu
;
Liou, Bo-Heng
;
Yeh, Fon-Shan
;
Chin, Albert
The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V-2 and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physics
High-performance SrTiO3 MIM capacitors for analog applications
(2006-09-01)
Chiang, K. C.
;
Huang, Ching-Chien
;
Chen, G. L.
;
Chen, Wen Jauh
;
Kao, H. L.
TAN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mu m(2) have been developed by using a high-kappa (kappa = 147-169) SrTiO3 dielectric containing nanometersized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V-2) voltage coefficient of the capacitance and the 3 x 10(-8) A/cm(2) leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.