Browsing by Author "Huang, Ching-Yu"

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A Study on Multiple Wearable Sensors for Activity Recognition
(2017-01-01)
Huang, Yu-Chuan
;
Yi, Chih-Wei
;
Peng, Wen-Chih
;
Lin, Hsing-Chen
;
Huang, Ching-Yu
In the past few years, human activity recognition is an active area of machine learning. The possible applications include daily activity monitoring for elders, exercise and fitness workout assistant systems, life style analysis, etc. In this work, tri-axial accelerometers were worn at the right wrist, left wrist and waist to collect motion data for activity recognition. Three supervised machine learning algorithms including random forests, decision trees and support vector machines were implemented to classify daily activities into running, walking, standing, sitting and dining from inertial data. The purposes of this study are to understand how good the machine learning algorithms can achieve and how the wearing location and number of sensors impact the recognition accuracy. Our results showed that the multi-sensors achieve the accuracy of 81%, and dominant hand sensor achieves the accuracy of 80%, which is 7% higher than non-dominant hand sensor.
High-performance p-channel polycrystalline-germanium thin-film transistors via excimer laser crystallization and counter doping
(2016-04-01)
Liao, Chan-Yu
;
Huang, Ching-Yu
;
Huang, Ming-Hui
;
Chou, Chia-Hsin
;
Cheng, Huang-Chung
High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large as 1 mu m were achieved by ELC at 300 mJ/cm(2). Meanwhile, the defect-generated hole concentrations in Ge thin films were significantly reduced. Furthermore, the majority carriers could then be converted to n-type by counter doping (CD) with a suitable dose. Then, high-performance p-channel Ge thin-film transistors (TFTs) with a high on/off current ratio of up to 1.7 x 10(3) and a high field-effect mobility of up to 208 cm(2) V-1 s(-1) were demonstrated for a channel width and length both of 0.5 mu m. It was revealed that ELC combined with CD is effective for attaining highp-erformance p-channel poly-Ge TFTs. (C) 2016 The Japan Society of Applied Physics
High-performance p-channel polycrystalline-germanium thin-film transistors via excimer laser crystallization and counter doping
(2016-04)
Liao, Chan-Yu
;
Huang, Ching-Yu
;
Huang, Ming-Hui
;
Chou, Chia-Hsin
;
Cheng, Huang-Chung
High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large as 1 mu m were achieved by ELC at 300 mJ/cm(2). Meanwhile, the defect-generated hole concentrations in Ge thin films were significantly reduced. Furthermore, the majority carriers could then be converted to n-type by counter doping (CD) with a suitable dose. Then, high-performance p-channel Ge thin-film transistors (TFTs) with a high on/off current ratio of up to 1.7 x 10(3) and a high field-effect mobility of up to 208 cm(2) V-1 s(-1) were demonstrated for a channel width and length both of 0.5 mu m. It was revealed that ELC combined with CD is effective for attaining highp-erformance p-channel poly-Ge TFTs. (C) 2016 The Japan Society of Applied Physics
High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films
(2017-06-01)
Liao, Chan-Yu
;
Huang, Ching-Yu
;
Huang, Ming-Hui
;
Huang, Wen-Hsien
;
Shen, Chang-Hong
High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type Ge thin films with a grain size as large as 1 mu m were fabricated by ELC in the super lateral-growth regime and CD at a dose of 1 x 10(13) cm(-2) or higher. Consequently, a superior field-effect mobility of 271cm(2)V(-1)s(-1) and a high on/off current ratio of 2.7 x 10(3) have been obtained for p-channel Ge TFTs with the channel width and length of both 0.5 mu m fabricated by ELC at 300mJ/cm(2) and CD at a dose of 1 x 10(13)cm(-2). The effects of ELC conditions and CD dose on the electrical characteristics of p-channel Ge TFTs were also investigated. (C) 2017 The Japan Society of Applied Physics.