Browsing by Author "Huang, Chingchien"

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High-Performance Metal-Insulator-Metal Capacitor Using Quality Properties of High-kappa TiPrO Dielectric
(2009)
Huang, Chingchien
;
Cheng, Chun-Hu
;
Lee, Ko-Tao
;
Liou, Bo-Heng
;
機械工程學系
In this paper, we demonstrate excellent material characteristics of TiPrO and high-density Ti(x)Pr(1-x)O (x approximate to 0.67) metal-insulator-metal (MIM) capacitors using high-work-function (similar to 5.3 eV) Ir top electrode. Low leakage current of 7x10(-9) A/cm(2) at -1 V and high 16 fF/mu m(2) capacitance density are achieved for 400 degrees C anneal TiPrO, which also meets the International Technology Roadmap for Semiconductors goals (at year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV). Furthermore, the improved high 20 fF/mu m(2) capacitance density TiPrO MIM was obtained at a higher anneal temperature, where a low leakage current of 1.2x10(-7) A/cm(2) was measured at -1 V. These good performances indicate that TiPrO MIM is suitable for analog/radio frequency integrated circuits.
Performance Improvement of Metal-Insulator-Metal Capacitors Using Postmetallization-Annealed Treatment on the Al(2)O(3)/TiO(2)/Al(2)O(3) Film
(2009-01-01)
Huang, Chingchien
;
Cheng, Chun-Hu
;
Lee, Kaotao
;
Liou, Bo-Heng
;
機械工程學系
This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al(2)O(3)/TiO(2)/Al(2)O(3) laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO(2) capacitors, deposition of the Al(2)O(3) layer enables significant leakage current reduction while maintaining good electrical performance. For an Al(2)O(3)/TiO(2)/Al(2)O(3) film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4x10(-9) A/cm(2) at 1 V for 18.3 fF/mu m(2) density Al(2)O(3)/TiO(2)/Al(2)O(3) MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV).
Performance Improvement of Metal-Insulator-Metal Capacitors Using Postmetallization-Annealed Treatment on the Al2O3/TiO2/Al2O3 Film
(2009-01-01)
Huang, Chingchien
;
Cheng, Chun-Hu
;
Lee, Kaotao
;
Liou, Bo-Heng
;
機械工程學系
This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4x10(-9) A/cm(2) at 1 V for 18.3 fF/mu m(2) density Al2O3/TiO2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV).