Browsing by Author "Huang, Chu-Jie"

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Impact of barrier layer on HfO2-based conductive bridge random access memory
(2019-03-04)
Lin, Chun-An
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Huang, Chu-Jie
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Tseng, Tseung-Yuen
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In this letter, we report the impact of the barrier layer on the performance of HfO2-based conductive bridge RAM (CBRAM) devices with TeTiW as the source layer. The considerable improvement of retention in the CBRAM device using TiW as the barrier layer is attributed to the lower amount of oxygen vacancies in the switching layer, which is justified from the O1s core level in X-ray photoelectron spectroscopy analyses. Therefore, the diffusion of Te in the resistive layer of the device with the TiW barrier layer is limited even at high temperature. The TeTiW/TiW/HfO2/TiN CBRAM device provides an excellent endurance of more than 10(4) cycles, with an on/off ratio of 200. Such a device also features long retention for up to 10(4) s at 200 degrees C.
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
(2017-12-01)
Simanjuntak, Firman Mangasa
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Singh, Pragya
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Chandrasekaran, Sridhar
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Lumbantoruan, Franky Juanda
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Yang, Chih-Chieh
An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (> 10(4) cycles) with a sufficient memory window (10(3) times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.