Browsing by Author "Huang, D. C."

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Dimensional Dependences of the Dynamic-NBTI with 1.2 nm N20-ISSG oxynitrides
(2007)
Lai, Chao Sung
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Huang, D. C.
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Chung, S. S.
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電機學院
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College of Electrical and Computer Engineering
More Strain and Less Stress- The Guideline for Developing High-End Strained CMOS Technologies with Acceptable Reliability
(2008)
Chung, Steve S.
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Hsieh, E. R.
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Huang, D. C.
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Lai, C. S.
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Tsai, C. H.
In this paper, the design guideline with emphasis on CMOS device reliability has been addressed. Advanced 65nm CMOS devices with various strain engineering were evaluated. For nMOSFETs, charge pumping (CP) measurement is efficient for their reliability characterizations. Although biaxial strained SiGe-channel device provides good driving current enhancement, it suffers from the Ge out-diffusion such that exhibits worse reliability. The SSOI device exhibits good hot-carrier immunity, but its interface quality needs special care during the process. In addition, SiC on S/D device is an alternative for high current enhancement, but its off-state junction leakage is serious. Then, CESL device becomes the most promising technology with high performance and the best reliability, especially with process simplicity. For pMOSFETs, both uniaxial and biaxial strained devices have been studied. For the first time, an accurate representation of interface trap (Nit) profiling, suitable for HC and NBTI analyses, has been developed by an improved DCIV method. The uniaxial-strained device shows much better reliability, in particular a special class of SiGe S/D device with EDB design seems to be promising. These results provide a valuable guideline for the aggressive design of strained CMOS technologies.
New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyond
(2006)
Chung, Steve S.
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Huang, D. C.
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Tsai, Y. J.
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Lai, C. S.
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Tsai, C. H.
In this paper, new observations on the uniaxial and biaxial strain-induced hot carrier reliability and/or NBTI in nMOSFET and pMOSFET respectively have been reported for the first time. Uniaxial and biaxial strained nMOSFET and pMOSFET have been extensively examined. Different mechanisms are responsible for different strains in nMOSFET and pMOSFET. For the nMOFETs, it was found that uniaxial strain device has comparable HC reliability with the control device, while biaxial SiGe-strained device exhibits a much worse reliability. This is related to a large impact ionization rate in a biaxial strain which leads to a much worse reliability. For the pMOSFETs, either uniaxial or biaxial strained device shows a comparable amount of HC degradation, while SiGe S/D strained structure might be better considering process complexity, performance, and reliability Although NBTI is still a great concern in SiGe S/D devices, embedded SiGe S/D technique can improve greatly the device NBTI reliability. These results provide a valuable guideline for the present 65nm and beyond CMOS device design with focus on the strain engineering.