Browsing by Author "Huang, F. S."

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Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage current
(2007-12-03)
Wang, M. C.
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Chang, T. C.
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Liu, P. T.
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Li, Y. Y.
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Huang, F. S.
For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source-drain metal have been fabricated for this study. Several TFT structures have been fabricated to examine this characteristic. A remarkable reduction in photo leakage current has been observed under the 3300 cd/m(2) CCFL backlight illumination. The source-drain barrier height engineering has been proposed for these results. According to the energy band diagram, the barrier height for hole is estimated about 3 eV. As a result, the photo-generation holes blocked in the source-drain barrier height could effectively reduce the photo leakage current in off-state. (C) 2007 Elsevier B.V. All rights reserved.
Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal
(2007-08-06)
Wang, M. C.
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Chang, T. C.
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Liu, Po-Tsun
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Xiao, R. W.
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Lin, L. F.
The feasibility of using Cu/CuMg as a source/drain metal for the island-in amorphous silicon thin film transistors (a-Si:H TFTs) has been investigated. The issue of adhesion between the Cu film and n(+)-a-Si layer has been overcome by introducing the Cu/CuMg alloy. Furthermore, the suppression of Schottky leakage current in metal/a-Si:H structure was also observed in the island-in a-Si:H TFT. The island-in a-Si:H TFT exhibited the mobility of 0.52 cm(2)/V s, the subthreshold slope of 0.78 V/decade, and the V-th of 3.02 V. The experimental result also showed superior performance of the a-Si:H TFT with minimal loss of critical dimension and good thermal stability.