Browsing by Author "Huang, F. W."

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Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates
(2011-04-01)
Yang, C. C.
;
Sheu, J. K.
;
Kuo, C. H.
;
Huang, M. S.
;
Tu, S. J.
The InGaN/sapphire-based photovoltaic (PV) cells with Al(0.14)Ga(0.86)N/In(0.21)Ga(0.79)N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the short-circuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm(2), 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.