Browsing by Author "Huang, Fon-Shan"

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Application of Supercritical CO(2) Fluid for Dielectric Improvement of SiO(x) Film
(2009-01-01)
Tsai, Chih-Tsung
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Cheng, Yi-Li
;
Kin, Kon-Tsu
In this paper the supercritical carbon dioxide (SCCO(2)) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the treatment of SCCO(2) fluid mixed with ethyl alcohol and pure H(2)O, the oxygen content of SiO(x) film increases and the traps within SiO(x) are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
(2009-01-01)
Tsai, Chih-Tsung
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Cheng, Yi-Li
;
Kin, Kon-Tsu
In this paper the supercritical carbon dioxide (SCCO2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiOx) film at 150 degrees C. After the treatment of SCCO2 fluid mixed with ethyl alcohol and pure H2O, the oxygen content of SiOx film increases and the traps within SiOx are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
Effect of NH(3) Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
(2011-03-01)
Chen, Yu-Ting
;
Chen, Kun-Ming
;
Lin, Cheng-Li
;
Yeh, Wen-Kuan
;
Huang, Guo-Wei
The effects of post-NH(3) plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-kappa/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk-and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-kappa layer. In this paper, appropriate post-NH(3) plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-kappa/metal-gate nMOSFET with a Gd cap layer.
Effect of NH3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
(2011-03-01)
Chen, Yu-Ting
;
Chen, Kun-Ming
;
Lin, Cheng-Li
;
Yeh, Wen-Kuan
;
Huang, Guo-Wei
The effects of post-NH3 plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-kappa/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk-and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-kappa layer. In this paper, appropriate post-NH3 plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-kappa/metal-gate nMOSFET with a Gd cap layer.
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
(2010-01-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Huang, Yu-Hao
;
Lin, Chao-Cheng
We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO(2) pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO(2) dielectric layer. Moreover, related reliability characteristics have been extracted.
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
(2010-01-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Huang, Yu-Hao
;
Lin, Chao-Cheng
We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2 pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO2 dielectric layer. Moreover, related reliability characteristics have been extracted.
Impact of Highly Compressive Interlayer-Dielectric-SiN(x) Stressing Layer on 1/f Noise and Reliability of SiGe-Channel pMOSFETs
(2010-12-01)
Chen, Yu-Ting
;
Chen, Kun-Ming
;
Liao, Wen-Shiang
;
Huang, Guo-Wei
;
Huang, Fon-Shan
The 1/f noise and reliability of SiGe-channel pMOSFETs with a highly compressive contact-etching stop-layer (CESL) interlayer-dielectric-SiN(x) stressing layer have been studied in this letter. The SiGe-channel devices with a highly compressive CESL layer have higher drain current and lower 1/f noise than the conventional SiGe-channel and bulk-Si devices. However, the device reliability is degraded while integrating with the highly compressive CESL layer. By examining the effective oxide-trap densities under hot-carrier instability stress, we find that the incorporated hydrogen in gate oxide during CESL layer deposition may play an important role on the 1/f noise and device reliability.
Impact of Highly Compressive Interlayer-Dielectric-SiNx Stressing Layer on 1/f Noise and Reliability of SiGe-Channel pMOSFETs
(2010-12-01)
Chen, Yu-Ting
;
Chen, Kun-Ming
;
Liao, Wen-Shiang
;
Huang, Guo-Wei
;
Huang, Fon-Shan
The 1/f noise and reliability of SiGe-channel pMOSFETs with a highly compressive contact-etching stop-layer (CESL) interlayer-dielectric-SiNx stressing layer have been studied in this letter. The SiGe-channel devices with a highly compressive CESL layer have higher drain current and lower 1/f noise than the conventional SiGe-channel and bulk-Si devices. However, the device reliability is degraded while integrating with the highly compressive CESL layer. By examining the effective oxide-trap densities under hot-carrier instability stress, we find that the incorporated hydrogen in gate oxide during CESL layer deposition may play an important role on the 1/f noise and device reliability.
Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
(2008-08-04)
Tsai, Chih-Tsung
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Cheng, Yi-Li
;
Huang, Fon-Shan
In this work, the supercritical CO(2) fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the proposed treatment, the SiO(x) film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 10(2) times and the retention time attains to 2x10(3) s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps. (C) 2008 American Institute of Physics.
Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization
(2007-07-02)
Tsai, Chih-Tsung
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Chang, Ting-Chang
;
Liu, Po-Tsun
;
Yang, Po-Yu
;
Kuo, Yu-Chieh
A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150 degrees C without significant formation of parasitic oxide at the interface between HfO2 and Si substrate. In this research, the HfO2 films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H2O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO2 film is only 5 angstrom thick. Additionally, the enhancements in the qualities of sputter-deposited HfO2 film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement. (c) 2007 American Institute of Physics.