Browsing by Author "Huang, G. W."

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4-GHz fully monolithic SiGe HBT QVCO using superharmonic coupling topology
(2006)
Tseng, S. C.
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Meng, C. C.
;
Chang, Y. W.
;
Huang, G. W.
;
電信工程研究所
This paper demonstrates a 4-GHz monolithic SiGe heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (QVCO) using superharmonic coupling topology. The quadrature VCO at 4.17 GHz has phase noise of -116 dBc/Hz at lMHz offset frequency, output power of -6 dBm and the figure of merit (FOM) -179 dBc/Hz. The core current consumption is 3.2 mA at 3V supply voltage. The die size is about 1.4 mm. x 1.2 mm.
4-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCO
(2006)
Meng, C. C.
;
Tseng, S. C.
;
Chang, Y. W.
;
Su, J. Y.
;
Huang, G. W.
The fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The quadrature VCO at 4.1 GHz has phase noise of -120 dBc/Hz at 1MHz offset frequency, output power of 2 dBm and the figure of merit (FOM) -178 dBc/Hz.
C-band fully integrated SiGe HBT superharmonic QVCO
(2007-04-01)
Tseng, S. C.
;
Meng, C. C.
;
Chang, Y. W.
;
Huang, G. W.
;
電信工程研究所
This paper demonstrates a 4-GHz monolithic SiGe heterojunction bipolar transistor quadrature voltage-con trolled oscillator (QVCO) using superharmonic coupling topology. The QVCO at 4.17 GHz has phase noise of -116 dBc/Hz at 1 MHz offset frequency, output power of -6 dBm, and the figure of merit - 179 dBc/Hz. The core current consumption is 3.2 mA at 3 V supply voltage. The die size is about 1.4 mm X 1.2 mm. (c) 2007 Wiley Periodicals. Inc.
High-gain high-isolation CMFB stacked-LO subharmonic Gilbert mixer using SiGe BiCMOS technology
(2007-05-01)
Wu, T. H.
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Meng, C. C.
;
Huang, G. W.
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2-GHz SiGe BiCMOS stacked-LO-stage CMFB (common made feedback) subharmonic mixer is demonstrated in this article. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation. (c) 2007 Wiley Periodicals, Inc.
Low-phase-noise transformer-based top-series QVCO using GaInP/GaAs HBT technology
(2007-01-01)
Meng, C. C.
;
Tseng, S. C.
;
Chang, Y. W.
;
Su, J. Y.
;
Huang, G. W.
The fully integrated GaInP/GaAs heterojunction bipolar transistor, transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The QVCO at 4.1 GHz has phase noise of - 120 dBc/Hz at 1 MHz offset frequency, output power of 2 dBm and the figure of merit -178 dBc/Hz. (c) 2006 Wiley Periodicals, Inc.
Pad Characterization for CMOS Technology Using Time Domain Reflectometry
(2008)
Chiu, C. S.
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Chen, W. L.
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Liao, K. H.
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Chen, B. Y.
;
Teng, Y. M.
The pad structure of CMOS technology is characterized by way of time domain reflectometry measurement. Using the on-wafer TDR measurement system, the capacitance of the pad in the CMOS process was extracted and estimated. Measured and Simulated TDR data are also presented in this study. The capacitance is estimated when the curve is fitted by mathematical tool. This method is simple to use, and furthermore the results agree with data extracted from vector network analyzer.
RF characteristics of BJT devices with selectively or fully ion-implanted collector
(2005)
Meng, C. C.
;
Su, J. Y.
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Tsou, B. C.
;
Huang, G. W.
;
電信工程研究所
A selectively ion-implanted collector (SIC) is implemented in a 0.8 um BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better ft and fmax than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The fmax is 9.5GHz and ft is 7.8 GHz for the SIC BJT device while the fmax is 7.2 GHz and fmax is 4.5 GHz for the FIC BJT device when biased at Vce=3.6 V and Jc=0.09 mA/um(2). The nois parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.